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1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation

Author
FENG, W1 ; PAN, J. Q1 ; WANG, L1 ; LIAO, Z. Y1 ; CHENG, Y. B1 ; CHEN, D. B1 ; ZHAO, L. J1 ; ZHU, H. L1 ; WANG, W1
[1] State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China
Source

Semiconductor science and technology. 2007, Vol 22, Num 8, pp 859-862, 4 p ; ref : 13 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Aluminium arséniure Boucle réaction Composé quaternaire Etude expérimentale Gallium arséniure Gallium phosphure Indium arséniure Indium phosphure Laser puits quantique Laser réaction répartie Laser semiconducteur Puits quantique multiple 4255P Al As Ga In As Ga In P InGaAlAs InGaAsP Laser couplage gain
Keyword (en)
Aluminium arsenides Feedback Quaternary compounds Experimental study Gallium arsenides Gallium phosphides Indium arsenides Indium phosphides Quantum well lasers Distributed feedback lasers Semiconductor lasers Multiple quantum well Gain-coupled lasers
Keyword (es)
Pozo cuántico múltiple
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes

Discipline
Physics : optics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18977392

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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