Fabrication of one-dimensional trenched GaN nanowires and their interconnections
- Author
- LEBEDEV, V1 ; CENGHER, D1 ; FISCHER, M1 ; TONISCH, K1 ; CIMALLA, V1 ; NIEBELSCHÜTZ, M1 ; AMBACHER, O1
[1] Institute of Micro-and Nanotechnologies, Technical University Ilmenau, 98684 Ilmenau, Germany - Source
Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 10, pp 3387-3391, 5 p ; ref : 17 ref
- ISSN
- 1862-6300
- Scientific domain
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique courant tension Croissance sélective Gallium nitrure Interconnexion Méthode MOCVD Nanofil Photolithographie Surface plane GaN
- Keyword (en)
- IV characteristic Selective growth Gallium nitrides Interconnections MOCVD Nanowires Photolithography Plane surface
- Keyword (es)
- Superficie plana
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19154289
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.200723163 
https://dx.doi.org/10.1002/pssa.200723163
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