Optical and structural analysis of porous silicon coated with GZO films using rf magnetron sputtering
- Author
- PRABAKARAN, R1 ; MONTEIRO, T2 ; PERES, M2 ; VIANA, A. S3 ; DA CUNHA, A. F2 ; AGUAS, H1 ; GONCALVES, A1 ; FORTUNATO, E1 ; MARTINS, R1 ; FERREIRA, I1
[1] CENIMAT, Department of Materials Science and CEMOP/UNINOVA, Faculty of Sciences and Technology, New University of Lisbon, Caparica 2829-516, Portugal
[2] Department of Physics, Aveiro University, 3810-193 Aveiro, Portugal
[3] Laboratório de SPM da Faculdade de Ciências, Universidade de Lisboa, Ed. ICAT, Campo Grande, 1749-016 Lisboa, Portugal - Conference title
- First International Symposium on Transparent Conducting Oxides: 1st IS TCO 2006
- Conference name
- IS-TCO 2006 : International Symposium on Transparent Conducting Oxides (1 ; Island of Crete 2006-10-23)
- Author (monograph)
- KIRIAKIDIS, George (Editor)1 ; BARATON, Marie-Isabelle (Editor)2 ; MAO, Samuel (Editor)3
[1] Physics Dpt. Univ. of Crete, IESL/FORTH, Voutes, PO Box 1385, Heraklion 71110 Crete, Greece
[2] University of Limoges, France
[3] University of Berkeley-California, United States - Source
Thin solid films. 2007, Vol 515, Num 24, pp 8664-8669, 6 p ; ref : 22 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Gallium zinc oxide IR Photoluminescence Porous silicon XRD
- Keyword (fr)
- Addition gallium Analyse structurale Couche mince Diffraction RX Défaut surface Dépôt physique phase vapeur Dépôt pulvérisation Gallium oxyde Gravure Microscopie force atomique Optoélectronique Photoluminescence Pulvérisation cathodique Pulvérisation haute fréquence Revêtement Rugosité Semiconducteur poreux Spectrométrie transformée Fourier Température ambiante Zinc oxyde 6855J 7855 8115C 8560
- Keyword (en)
- Gallium additions Structural analysis Thin films XRD Surface defect Physical vapor deposition Sputter deposition Gallium oxides Etching Atomic force microscopy Optoelectronics Photoluminescence Cathode sputtering Radiofrequency sputtering Coatings Roughness Porous semiconductors Fourier transform spectroscopy Ambient temperature Zinc oxides
- Keyword (es)
- Análisis estructural Defecto superficie Optoelectrónica Pulverización alta frecuencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19171782
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2007.03.098 
https://dx.doi.org/10.1016/j.tsf.2007.03.098
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