Source/drain extension region engineering in nanoscale double gate SOI MOSFETs : Novel design methodology for low-voltage analog applications
- Author
- KRANTI, Abhinav1 ; ARMSTRONG, G. Alastair1
[1] Northern Ireland Semiconductor Research Centre (NISRC), School of Electrical and Electronic Engineering, Queen's University Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland, United Kingdom - Source
Microelectronic engineering. 2007, Vol 84, Num 12, pp 2775-2784, 10 p ; ref : 30 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Cut-off frequency Early voltage Gate capacitances Intrinsic voltage gain Low-voltage/low-power analog applications Nanoscale double gate SOI MOSFET Source/drain extension region engineering Transconductance-to-current ratio
- Keyword (fr)
- Basse tension Cale espacement Capacité électrique Circuit analogique Circuit puissance Courant drain Dopage Electronique faible puissance Facteur mérite Fréquence coupure Gain Optimisation Technologie silicium sur isolant Transconductance Transistor MOSFET Transistor grille double
- Keyword (en)
- Low voltage Spacer Capacitance Analog circuit Power circuit Drain current Doping Low-power electronics Figure of merit Cut off frequency Gain Optimization Silicon on insulator technology Transconductance MOSFET Dual gate transistor
- Keyword (es)
- Baja tensión Calce espaciamiento Capacitancia Circuito analógico Circuito potencia Corriente dren Doping Factor mérito Frecuencia corte Ganancia Optimización Tecnología silicio sobre aislante Transconductancia Transistor de compuerta doble
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A8 Analog circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19916655
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2007.01.157 
https://dx.doi.org/10.1016/j.mee.2007.01.157
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