Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogen
- Author
- FUKATA, N1 ; SATO, S2 ; FUKUDA, S2 ; ISHIOKA, K3 ; KITAJIMA, M3 ; HISHITA, S4 ; MURAKAMI, K2
[1] Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba 305-0044, Japan
[2] Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573, Japan
[3] Advanced Nano Characterization Center, National Institute for Materials Science, Tsukuba 305-0047, Japan
[4] Sensor Materials Center, National Institute for Materials Science, Tsukuba 305-0044, Japan - Conference title
- Proceedings of the 24th International Conference on Defects in Semiconductors ICDS-24, Held in Albuquerque, NM, USA, 22-27 July 2007
- Conference name
- ICDS-24 International Conference on Defects in Semiconductors (24 ; Albuquerque, NM 2007-07-22)
- Author (monograph)
- ESTREICHER, Stefan K (Editor)1 ; HOLTZ, Mark W (Editor)1 ; SEAGER, Carleton H (Editor)2 ; WRIGHT, Alan F (Editor)2
[1] Physics Department, Texas Tech University, Mail Stop 1051, Lubbock, TX 79409, United States
[2] Sandia National Laboratories, United States - Source
Physica. B, Condensed matter. 2007, Vol 401-02, pp 175-178, 4 p ; ref : 18 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Dopant impurity Four-point probe Hydrogen Raman scattering Silicon
- Keyword (fr)
- Addition bore Addition phosphore Annihilation défaut Dopage Défaut complexe Etat défaut Impureté Liaison disponible Passivation Piégeage porteur charge Recuit Silicium Spectre Raman Si
- Keyword (en)
- Boron additions Phosphorus additions Defect annihilation Doping Complex defect Defect states Impurities Dangling bonds Passivation Charge carrier trapping Annealing Silicon Raman spectra
- Keyword (es)
- Aniquilación defecto Doping Defecto complejo Captura portador carga
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19925043
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/j.physb.2007.08.140 
https://dx.doi.org/10.1016/j.physb.2007.08.140
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2007.08.140\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:89:\"Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogen\";s:9:\"\u0000*\u0000jtitle\";s:28:\"Physica. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:26:\"Physica, B Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:6:\"401-02\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"175\";s:8:\"\u0000*\u0000epage\";s:3:\"178\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-4526\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"FUKATA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"N\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:7:\"SATO, S\";i:1;s:9:\"FUKUDA, S\";i:2;s:10:\"ISHIOKA, K\";i:3;s:11:\"KITAJIMA, M\";i:4;s:10:\"HISHITA, S\";i:5;s:11:\"MURAKAMI, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:132:\"Proceedings of the 24th International Conference on Defects in Semiconductors ICDS-24, Held in Albuquerque, NM, USA, 22-27 July 2007\";s:8:\"\u0000*\u0000title\";s:89:\"Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogen\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2007.08.140\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:89:\"Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogen\";s:9:\"\u0000*\u0000jtitle\";s:28:\"Physica. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:26:\"Physica, B Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:6:\"401-02\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"175\";s:8:\"\u0000*\u0000epage\";s:3:\"178\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-4526\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"FUKATA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"N\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:7:\"SATO, S\";i:1;s:9:\"FUKUDA, S\";i:2;s:10:\"ISHIOKA, K\";i:3;s:11:\"KITAJIMA, M\";i:4;s:10:\"HISHITA, S\";i:5;s:11:\"MURAKAMI, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:132:\"Proceedings of the 24th International Conference on Defects in Semiconductors ICDS-24, Held in Albuquerque, NM, USA, 22-27 July 2007\";s:8:\"\u0000*\u0000title\";s:89:\"Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogen\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2007.08.140\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2007.08.140\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:89:\"Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogen\";s:9:\"\u0000*\u0000jtitle\";s:28:\"Physica. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:26:\"Physica, B Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:6:\"401-02\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"175\";s:8:\"\u0000*\u0000epage\";s:3:\"178\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-4526\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"FUKATA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"N\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:7:\"SATO, S\";i:1;s:9:\"FUKUDA, S\";i:2;s:10:\"ISHIOKA, K\";i:3;s:11:\"KITAJIMA, M\";i:4;s:10:\"HISHITA, S\";i:5;s:11:\"MURAKAMI, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:132:\"Proceedings of the 24th International Conference on Defects in Semiconductors ICDS-24, Held in Albuquerque, NM, USA, 22-27 July 2007\";s:8:\"\u0000*\u0000title\";s:89:\"Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogen\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2007.08.140\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:89:\"Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogen\";s:9:\"\u0000*\u0000jtitle\";s:28:\"Physica. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:26:\"Physica, B Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:6:\"401-02\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"175\";s:8:\"\u0000*\u0000epage\";s:3:\"178\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-4526\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"FUKATA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"N\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:7:\"SATO, S\";i:1;s:9:\"FUKUDA, S\";i:2;s:10:\"ISHIOKA, K\";i:3;s:11:\"KITAJIMA, M\";i:4;s:10:\"HISHITA, S\";i:5;s:11:\"MURAKAMI, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:132:\"Proceedings of the 24th International Conference on Defects in Semiconductors ICDS-24, Held in Albuquerque, NM, USA, 22-27 July 2007\";s:8:\"\u0000*\u0000title\";s:89:\"Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogen\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physb.2007.08.140\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:89:\"Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogen\";s:9:\"\u0000*\u0000jtitle\";s:28:\"Physica. B, Condensed matter\";s:9:\"\u0000*\u0000stitle\";s:26:\"Physica, B Condens. matter\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:6:\"401-02\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"175\";s:8:\"\u0000*\u0000epage\";s:3:\"178\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-4526\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"FUKATA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"N\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:7:\"SATO, S\";i:1;s:9:\"FUKUDA, S\";i:2;s:10:\"ISHIOKA, K\";i:3;s:11:\"KITAJIMA, M\";i:4;s:10:\"HISHITA, S\";i:5;s:11:\"MURAKAMI, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:132:\"Proceedings of the 24th International Conference on Defects in Semiconductors ICDS-24, Held in Albuquerque, NM, USA, 22-27 July 2007\";s:8:\"\u0000*\u0000title\";s:89:\"Passivation and reactivation of carriers in B-and P-doped Si treated with atomic hydrogen\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
