2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read
- Author
- KAWAHARA, Takayuki1 ; TAKEMURA, Riichiro1 ; MATSUKURA, Fumihiro3 ; TAKAHASHI, Hiromasa2 ; MATSUOKA, Hideyuki2 ; OHNO, Hideo3 ; MIURA, Katsuya2 ; HAYAKAWA, Jun2 3 ; IKEDA, Shoji3 ; YOUNG MIN LEE3 ; SASAKI, Ryutaro3 ; GOTO, Yasushi1 ; ITO, Kenchi2 ; MEGURO, Toshiyasu3
[1] Central Research Laboratory, Hitachi Ltd, Tokyo 185-8601, Japan
[2] Advanced Research Laboratory, Hitachi Ltd, Tokyo 185-8601, Japan
[3] Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication, Tohoku University, Miyagi 980-8577, Japan - Conference title
- The 2007 IEEE International Solid-State Circuits Conference (ISSCC)
- Conference name
- 2007 IEEE International Solid-State Circuits Conference (San Francisco, CA 2007-02-11)
- Author (monograph)
- HARRIS, David Money (Editor)1 ; NATARAJAN, Sreedhar (Editor)2 ; KRISHNAMURTHY, Ram K (Editor)3 ; SIVA GURUSAMI NARENDRA (Editor)4
IEEE, International (Organiser of meeting)
[1] Harvey Mudd College, Claremont, CA 91711, United States
[2] Emerging Memory Technologies Inc., Kanata, ON K2K 2V6, Canada
[3] Intel Corporation, Hillsboro, OR 97124, United States
[4] Tyfone, Inc., Portland, OR 97223, United States - Source
IEEE journal of solid-state circuits. 2008, Vol 43, Num 1, pp 109-120, 12 p ; ref : 13 ref
- CODEN
- IJSCBC
- ISSN
- 0018-9200
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Bi-directional current write parallelizing direction current read TMR low-power RAM nonvolatile RAM spin-transfer torque universal memory
- Keyword (fr)
- Basse tension Circuit intégré Effet tunnel Electronique faible puissance Liaison bidirectionnelle Mémoire accès direct Temps accès
- Keyword (en)
- Low voltage Integrated circuit Tunnel effect Low-power electronics Bidirectional link Random access memory Access time
- Keyword (es)
- Baja tensión Circuito integrado Efecto túnel Unión bidireccional Memoria acceso directo Tiempo acceso
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20222711
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/JSSC.2007.909751 
https://dx.doi.org/10.1109/JSSC.2007.909751
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