Stack Sizing for Optimal Current Drivability in Subthreshold Circuits
- Author
- KEANE, John1 ; EOM, Hanyong1 ; KIRN, Tae-Hyoung1 ; SAPATNEKAR, Sachin1 ; KIM, Chris1
[1] Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, United States - Source
IEEE transactions on very large scale integration (VLSI) systems. 2008, Vol 16, Num 5, pp 598-602, 5 p ; ref : 7 ref
- ISSN
- 1063-8210
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, Piscataway, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Logical effort subthreshold logic ultra low power design
- Keyword (fr)
- Chemin critique Conception circuit Conception optimale Consommation énergie électrique Courant équivalent Dimensionnement Electronique faible puissance Evaluation performance Grille transistor Logique seuil Multicouche Transistor MOS
- Keyword (en)
- Critical path Circuit design Optimal design Power consumption Equivalent current Dimensioning Low-power electronics Performance evaluation Transistor gate Threshold logic Multiple layer MOS transistor
- Keyword (es)
- Recorrido crítico Diseño circuito Concepción optimal Corriente equivalente Dimensionamiento Evaluación prestación Rejilla transistor Lógica umbral Capa múltiple Transistor MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20297709
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TVLSI.2008.917571 
https://dx.doi.org/10.1109/TVLSI.2008.917571
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