Stark effect of electrons in semiconducting rectangular quantum boxes
- Author
- GUOZHU WEI1 2 ; SHENG WANG1 ; GUANGYU YI1
[1] College of Sciences, Northeastern University, Shenyang 110004, China
[2] International Center for Material Physics, Academia Sinica, Shenyang 110015, China - Source
Microelectronics journal. 2008, Vol 39, Num 5, pp 786-791, 6 p ; ref : 20 ref
- ISSN
- 0959-8324
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Quantum boxes Stark effect
- Keyword (fr)
- Champ intense Champ électrique Effet Stark Fonction quadratique Modèle masse effective Point quantique Transition interbande 8107T
- Keyword (en)
- High field Electric fields Stark effect Quadratic function Effective mass model Quantum dots Interband transitions
- Keyword (es)
- Función cuadrática Modelo masa efectiva
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20368170
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mejo.2007.12.012 
https://dx.doi.org/10.1016/j.mejo.2007.12.012
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