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Self-Sorted, Aligned Nanotube Networks for Thin-Film Transistors

Author
LEMIEUX, Melburne C1 ; ROBERTS, Mark1 ; BARMAN, Soumendra1 ; YONG WAN JIN2 ; JONG MIN KIM2 ; ZHENAN BAO1
[1] Department of Chemical Engineering, Stanford University, Stanford, CA 94305, United States
[2] Samsung Advanced Institute of Technology, Giheung-gu, Younggin-si Gyunggi-do 449-712, Korea, Republic of
Source

Science (Washington, D.C.). 2008, Vol 321, Num 5885, pp 101-104, 4 p

CODEN
SCIEAS
ISSN
0036-8075
Scientific domain
Multidisciplinary
Publisher
American Association for the Advancement of Science, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Autoorganisation Chimie surface Chiralité Méthode en solution Nanotube carbone Nanotube monofeuillet Propriété électronique Revêtement centrifugation Technologie autoalignée Transistor couche mince Transistor effet champ 8107D
Keyword (en)
Self organization Surface chemistry Chirality Growth from solution Carbon nanotubes Singlewalled nanotube Electronic properties Spin-on coatings Self aligned technology Thin film transistor Field effect transistor
Keyword (es)
Autoorganización Quiralidad Método en solución Nanotubo pared única Propiedad electrónica Tecnología rejilla autoalineada Transistor capa delgada Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07D Nanotubes

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20491235

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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