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Theoretical models for doping diamond for semiconductor applications : Solar energetics: from photovoltaics to water splitting

Author
GOSS, J. P1 ; EYRE, R. J1 ; BRIDDON, P. R1
[1] School of Natural Sciences, Newcastle University, Newcastle Upon Tyne, NE1 7RU, United Kingdom
Source

Physica status solidi. B. Basic research. 2008, Vol 245, Num 9, pp 1679-1700, 22 p ; ref : 203 ref

CODEN
PSSBBD
ISSN
0370-1972
Scientific domain
Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Wiley, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Centre donneur Compensation Diamant Dopage Défaut complexe Etat impureté Impureté Lacune Mobilité porteur charge Semiconducteur Solubilité Structure bande
Keyword (en)
Donor center Compensation Diamonds Doping Complex defect Impurity states Impurities Vacancies Carrier mobility Semiconductor materials Solubility Band structure
Keyword (es)
Centro dador Doping Defecto complejo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A20 Electron density of states and band structure of crystalline solids / 001B70A20M Elemental semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20618407

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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