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Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs : Nanowire transistors: modeling, device, desing, and technology

Author
POLI, Stefano1 2 ; PALA, Marco G3 ; POIROUX, Thierry2 ; DELEONIBUS, Simon2 ; BACCARANI, Giorgio1
[1] Advanced Research Center on Electronic Systems, University of Bologna, 40122 Bologna, Italy
[2] CEA-LETI-MINATEC, 38054 Grenoble, France
[3] IMEP-LAHC, INPG-MINATEC (UMR CNRS/INPG/ UJF 5130), BP 257, 38016 Grenoble, France
Source

I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 11, pp 2968-2976, 9 p ; ref : 28 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
Effective mobility nonequilibrium Green's functions (NEGFs) quasi-ballistic transport silicon nanowire (Si-NW) surface roughness (SR)
Keyword (fr)
Autocohérence Comportement parasite Contact isolant semiconducteur Couplage mode Densité électron Ecart type Effet dimensionnel Fonction Green Haute tension Mode transversal Nanofil Rugosité Régime hors équilibre Tension de grille Transistor effet champ Transport balistique
Keyword (en)
Self consistency Parasitic behavior Semiconductor insulator contact Mode coupling Electron density Standard deviation Size effect Green function High voltage Transverse mode Nanowires Roughness Non equilibrium conditions Gate voltage Field effect transistor Ballistic transport
Keyword (es)
Autocoherencia Conducta parásito Contacto aislante semiconductor Acoplamiento modo Densidad electrón Desviación típica Efecto dimensional Función Green Alta tensión Modo transversal Rugosidad Régimen fuera equilibrio Voltaje de rejilla Transistor efecto campo Transporte balístico
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20859763

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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