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General 2D Schrodinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors

Author
ALI POURGHADERI, M1 ; MAGNUS, Wim1 2 ; SOREE, Bart1 ; DE MEYER, Kristin1 3 ; MEURIS, Marc1 ; HEYNS, Marc1 3
[1] IMEC, Kapeldreef 75, 3001 Leuven, Belgium
[2] Physics Department, Universiteit Antwerpen, Groenenborgerlaan 171, 2020 Antwerpen, Belgium
[3] Engineering Department, Katholieke Universiteit Leuven, Kasteelpark, Arenberg 10, 3001 Leuven, Belgium
Source

Journal of computational electronics (Print). 2008, Vol 7, Num 4, pp 475-484, 10 p ; ref : 6 ref

ISSN
1569-8025
Scientific domain
Electronics
Publisher
Springer, Heidelberg
Publication country
Germany
Document type
Article
Language
English
Author keyword
Ballistic transport Open boundary conditions Quantum transmitting boundary Two-dimensional Schrödinger-Poisson solver
Keyword (fr)
Algorithme Bande conduction Codage Condition aux limites Densité porteur charge Distribution densité Equation Poisson Equation Schrödinger Germanium Haute tension Implémentation Masse effective Modèle 2 dimensions Nanoélectronique Potentiel chimique Silicium Technologie MOS complémentaire Technologie NMOS Tension drain Transistor MOS Transport quantique Ge Si
Keyword (en)
Algorithm Conduction band Coding Boundary condition Charge carrier density Density distribution Poisson equation Schrödinger equation Germanium High voltage Implementation Effective mass Two dimensional model Nanoelectronics Chemical potential Silicon Complementary MOS technology NMOS technology Drain voltage MOS transistor Quantum transport
Keyword (es)
Algoritmo Banda conducción Codificación Condiciones límites Concentración portador carga Distribución densidad Ecuación Poisson Ecuación Schrödinger Germanio Alta tensión Implementación Masa efectiva Modelo 2 dimensiones Nanoelectrónica Potencial químico Silicio Tecnología MOS complementario Tecnología NMOS Tensión dren Transistor MOS Transporte cuántico
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20870454

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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