High-resolution analytical electron microscopy of catalytically etched silicon nanowires
- Author
- SCHADE, M1 ; GEYER, N1 ; FUHRMANN, B1 ; HEYROTH, F1 ; LEIPNER, H. S1
[1] Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle, Germany - Source
Applied physics. A, Materials science & processing (Print). 2009, Vol 95, Num 2, pp 325-327, 3 p ; ref : 8 ref
- ISSN
- 0947-8396
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Alignement vertical Gravure plasma Lithographie Microscopie électronique analytique Microscopie électronique balayage transmission Microscopie électronique transmission Microstructure Nanofil Procédé voie humide Silicium Si
- Keyword (en)
- Vertical alignment Plasma etching Lithography Analytical electron microscopy Scanning transmission electron microscopy Transmission electron microscopy Microstructure Nanowires Wet process Silicon
- Keyword (es)
- Alineacíon vertical Grabado plasma Microscopía electrónica analítica Procedimiento vía húmeda
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A46 Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21206066
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1007/s00339-009-5101-x 
https://dx.doi.org/10.1007/s00339-009-5101-x
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-009-5101-x\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"High-resolution analytical electron microscopy of catalytically etched silicon nanowires\";s:9:\"\u0000*\u0000jtitle\";s:58:\"Applied physics. A, Materials science & processing (Print)\";s:9:\"\u0000*\u0000stitle\";s:43:\"Appl. phys., A Mater. sci. process. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:2:\"95\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"325\";s:8:\"\u0000*\u0000epage\";s:3:\"327\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0947-8396\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"SCHADE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:8:\"GEYER, N\";i:1;s:11:\"FUHRMANN, B\";i:2;s:10:\"HEYROTH, F\";i:3;s:13:\"LEIPNER, H. S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:88:\"High-resolution analytical electron microscopy of catalytically etched silicon nanowires\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-009-5101-x\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"High-resolution analytical electron microscopy of catalytically etched silicon nanowires\";s:9:\"\u0000*\u0000jtitle\";s:58:\"Applied physics. A, Materials science & processing (Print)\";s:9:\"\u0000*\u0000stitle\";s:43:\"Appl. phys., A Mater. sci. process. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:2:\"95\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"325\";s:8:\"\u0000*\u0000epage\";s:3:\"327\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0947-8396\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"SCHADE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:8:\"GEYER, N\";i:1;s:11:\"FUHRMANN, B\";i:2;s:10:\"HEYROTH, F\";i:3;s:13:\"LEIPNER, H. S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:88:\"High-resolution analytical electron microscopy of catalytically etched silicon nanowires\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-009-5101-x\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-009-5101-x\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"High-resolution analytical electron microscopy of catalytically etched silicon nanowires\";s:9:\"\u0000*\u0000jtitle\";s:58:\"Applied physics. A, Materials science & processing (Print)\";s:9:\"\u0000*\u0000stitle\";s:43:\"Appl. phys., A Mater. sci. process. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:2:\"95\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"325\";s:8:\"\u0000*\u0000epage\";s:3:\"327\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0947-8396\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"SCHADE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:8:\"GEYER, N\";i:1;s:11:\"FUHRMANN, B\";i:2;s:10:\"HEYROTH, F\";i:3;s:13:\"LEIPNER, H. S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:88:\"High-resolution analytical electron microscopy of catalytically etched silicon nanowires\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-009-5101-x\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"High-resolution analytical electron microscopy of catalytically etched silicon nanowires\";s:9:\"\u0000*\u0000jtitle\";s:58:\"Applied physics. A, Materials science & processing (Print)\";s:9:\"\u0000*\u0000stitle\";s:43:\"Appl. phys., A Mater. sci. process. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:2:\"95\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"325\";s:8:\"\u0000*\u0000epage\";s:3:\"327\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0947-8396\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"SCHADE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:8:\"GEYER, N\";i:1;s:11:\"FUHRMANN, B\";i:2;s:10:\"HEYROTH, F\";i:3;s:13:\"LEIPNER, H. S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:88:\"High-resolution analytical electron microscopy of catalytically etched silicon nanowires\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-009-5101-x\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"High-resolution analytical electron microscopy of catalytically etched silicon nanowires\";s:9:\"\u0000*\u0000jtitle\";s:58:\"Applied physics. A, Materials science & processing (Print)\";s:9:\"\u0000*\u0000stitle\";s:43:\"Appl. phys., A Mater. sci. process. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:2:\"95\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"325\";s:8:\"\u0000*\u0000epage\";s:3:\"327\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0947-8396\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"SCHADE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:8:\"GEYER, N\";i:1;s:11:\"FUHRMANN, B\";i:2;s:10:\"HEYROTH, F\";i:3;s:13:\"LEIPNER, H. S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:88:\"High-resolution analytical electron microscopy of catalytically etched silicon nanowires\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
