Polymer gate dielectrics with self-assembled monolayers for high-mobility organic thin-film transistors based on copper phthalocyanine
- Author
- YANMING SUN1 ; YUNQI LIU1 ; YING WANG1 ; CHONGAN DI1 ; WEIPING WU1 ; GUI YU1
[1] Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China - Source
Applied physics. A, Materials science & processing (Print). 2009, Vol 95, Num 3, pp 777-780, 4 p ; ref : 26 ref
- ISSN
- 0947-8396
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Capacité électrique Couche autoassemblée Couche mince Drain transistor Dépendance fréquence Morphologie surface Phtalocyanine métallique Piégeage porteur charge Transistor couche mince Vinylique alcool polymère
- Keyword (en)
- Capacitance Self-assembled layer Thin film Transistor drain Frequency dependence Surface morphology Metallophthalocyanine Charge carrier trapping Thin film transistor Polyvinylalcohol
- Keyword (es)
- Capacitancia Capa autoensamblada Capa fina Dren transistor Ftalocianina metálica Captura portador carga Transistor capa delgada Vinílico alcohol polímero
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21343970
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s00339-008-5069-y 
https://dx.doi.org/10.1007/s00339-008-5069-y
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