Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1―xGex Layers
- Author
- ALPTEKIN, Emre1 ; KIRKPATRICK, Casey Joe1 ; MISRA, Veena1 ; OZTURK, Mehmet C1
[1] Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911, United States - Source
I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1220-1227, 8 p ; ref : 22 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Platinum germanide PtGe PtSiGe Schottky barrier height SiGe platinum germanosilicide platinum silicide
- Keyword (fr)
- Alliage semiconducteur Barrière Schottky Canal p Contrainte compression Fonction exponentielle Hauteur barrière Nanoélectronique Niveau Fermi Résistance contact Résistance parasite Résistance série Structure surface Transistor MOSFET Travail sortie
- Keyword (en)
- Semiconductor alloys Schottky barrier p channel Compressive stress Exponential function Barrier height Nanoelectronics Fermi level Contact resistance Parasitic resistance Series resistance Surface structure MOSFET Work function
- Keyword (es)
- Barrera Schottky Canal p Tensión compresión Función exponencial Altura barrera Nanoelectrónica Nivel Fermi Resistencia contacto Resistencia parásita Resistencia en serie Estructura superficie Función de trabajo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21741995
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2009.2018159 
https://dx.doi.org/10.1109/TED.2009.2018159
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