Polarization-Induced Hole Doping in Wide―Band-Gap Uniaxial Semiconductor Heterostructures
- Author
- SIMON, John1 ; PROTASENKO, Vladimir1 ; CHUANXIN LIAN1 ; HUILI XING1 ; JENA, Debdeep1
[1] Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556, United States - Source
Science (Washington, D.C.). 2010, Vol 327, Num 5961, pp 60-64, 5 p
- CODEN
- SCIEAS
- ISSN
- 0036-8075
- Scientific domain
- Multidisciplinary
- Publisher
- American Association for the Advancement of Science, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Centre accepteur Conductivité type p Conductivité électrique Cristal uniaxe Densité trou Dopage Effet Hall Energie activation Hétérostructure Impureté Polarisation Semiconducteur bande interdite large
- Keyword (en)
- Acceptor center P type conductivity Electrical conductivity Uniaxial crystals Hole density Doping Hall effect Activation energy Heterostructures Impurities Polarization Wide band gap semiconductors
- Keyword (es)
- Centro aceptor Conductividad tipo p Cristal uniáxico Doping
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C63 Electronic transport in multilayers, nanoscale materials and structures
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22280690
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1126/science.1183226 
https://dx.doi.org/10.1126/science.1183226
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