Intrinsic defects in CdTe and CdZnTe alloys
- Author
- CARVALHO, A1 ; TAGANTSEV, A1 ; ÖBERG, S2 ; BRIDDON, P. R3 ; SETTER, N1
[1] Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), 1015 Lausanne, Switzerland
[2] Department of Mathematics, Luleå University of Technology, Luleå 97187, Sweden
[3] School of Electrical, Electronic and Computer Engineering, University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU, United Kingdom - Conference title
- Proceedings of the 25th International Conference on Defects in Semiconductors: ICDS-25
- Conference name
- International Conference on Defects in Semiconductors (ICDS) (ICDS) (25 ; Saint Petersburg 2009-07-20)
- Author (monograph)
- BAGRAEV, Nikolay T (Editor)1 ; EMTSEV, Vadim V (Editor)1 ; ESTREICHER, Stefan K (Editor)2
[1] Ioffe Institute, St. Petersburg, Russian Federation
[2] Texas Tech University, United States - Source
Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5019-5021, 3 p ; ref : 14 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- Russian
- Author keyword
- 61.80.Az 61.80.Ed 61.80.Fe 61.82.Fk Alloys CdTe Conductivity Defects ZnTe
- Keyword (fr)
- Cadmium Zinc Tellurure Mixte Conductivité type p Défaut antisite Lacune Méthode fonctionnelle densité Tellurure de cadmium Cd1-xZnxTe CdTe
- Keyword (en)
- Cadmium Zinc Tellurides Mixed P type conductivity Antisite defects Vacancies Density functional method Cadmium tellurides
- Keyword (es)
- Mixto Conductividad tipo p
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55G Ii-vi semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 22310405
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physb.2009.08.251 
https://dx.doi.org/10.1016/j.physb.2009.08.251
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