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Structure-dependent behavior of stress-induced voiding in Cu interconnects

Author
WU, Zhen-Yu1 ; YANG, Yin-Tang1 ; CHAI, Chang-Chun1 ; LI, Yue-Jin1 ; WANG, Jia-You1 ; BIN LI1 ; JING LIU1
[1] Key Laboratory of Ministry of Education for Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Source

Thin solid films. 2010, Vol 518, Num 14, pp 3778-3781, 4 p ; ref : 20 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Interconnect Reliability Stress-induced voiding
Keyword (fr)
Analyse dommage Cavité dans réseau Contrainte traction Coupe transversale Cuivre Diffusion(transport) Défaut cristallin Effet contrainte Etude théorique Faisceau ion Fiabilité Lacune Modélisation Potentiel chimique Section efficace 6172Q 6835F
Keyword (en)
Failure analysis Voids Tensile stress Cross section Copper Diffusion Crystal defects Stress effects Theoretical study Ion beams Reliability Vacancies Modelling Chemical potential Cross sections
Keyword (es)
Tensión traccíon Corte transverso
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35F Diffusion; interface formation

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
22769862

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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