Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
- Author
- CORDIER, Y1 ; MORENO, J.-C1 ; BARON, N1 2 ; FRAYSSINET, E1 ; CHAUVEAU, J.-M1 3 ; NEMOZ, M1 ; CHENOT, S1 ; DATNILANO, B1 ; SEMOND, F1
[1] CRHEA-CNRS, rue B. Gregory, Parc de Sophia Antipolis, 06560 Valbonne, France
[2] Picogiga International, Place Marcel Rebuffat, 91971 Courtaboeuf, France
[3] Physics Department, University of Nice-Sophia Antipolis, 06103 Nice, France - Source
Journal of crystal growth. 2010, Vol 312, Num 19, pp 2683-2688, 6 p ; ref : 26 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- A1. Molecular beam epitaxy B1. GaN on silicon B1. Nitrides B3. High electron mobility transistor B3. Light emitting diode
- Keyword (fr)
- Ammoniac Composé III-V Densité dislocation Diode électroluminescente Dislocation filetée Dispositif optoélectronique Epitaxie jet moléculaire Face cristalline Hétérostructure Microscopie électronique transmission Mécanisme croissance Nitrure d'indium Nitrure de gallium Propriété optique Propriété symétrie Propriété électrique Précurseur Semiconducteur III-V Silicium Transistor mobilité électron élevée 6150A 7820 8110A 8115H AlGaN GaN InGaN NH3 Si
- Keyword (en)
- Ammonia III-V compound Dislocation density Light emitting diodes Threading dislocation Optoelectronic devices Molecular beam epitaxy Crystal faces Heterostructures Transmission electron microscopy Growth mechanism Indium nitride Gallium nitride Optical properties Symmetry property Electrical properties Precursor III-V semiconductors Silicon High electron mobility transistors
- Keyword (es)
- Compuesto III-V Dislocación aterrajada Mecanismo crecimiento Indio nitruro Galio nitruro Propiedad simetría
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A50 Crystalline state (including molecular motions in solids) / 001B60A50A Theory of crystal structure, crystal symmetry; calculations and modeling
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23243039
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2010.06.024 
https://dx.doi.org/10.1016/j.jcrysgro.2010.06.024
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