Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms
- Author
- RUMYANTSEV, S1 2 ; LIU, G3 ; STILLMAN, W1 ; SHUR, M1 ; BALANDIN, A. A3
[1] Center for Integrated Electronics, Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, United States
[2] Ioffe Institute, Russian Academy of Sciences, St Petersburg, 194021, Russian Federation
[3] Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, Bourns College of Engineering, University of California-Riverside, Riverside, CA 92521, United States - Source
Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 39 ; 395302.1-395302.7 ; ref : 38 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Bicouche Bruit basse fréquence Bruit fond Caractéristique courant tension Densité spectrale Graphène Résistance contact Transistor effet champ Vieillissement
- Keyword (en)
- Bilayers 1/f noise Background noise Voltage current curve Spectral density Graphene Contact resistance Field effect transistor Ageing
- Keyword (es)
- Ruido baja frecuencia Ruido fondo Característica corriente tensión Densidad espectral Graphene Resistencia contacto Transistor efecto campo Envejecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23298055
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-8984/22/39/395302 
https://dx.doi.org/10.1088/0953-8984/22/39/395302
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