Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
- Author
- CHUNG, Kunook1 ; LEE, Chul-Ho1 2 ; YI, Gyu-Chul1
[1] National Creative Research Initiative Center for Semiconductor Nanorods and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea, Republic of
[2] Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Korea, Republic of - Source
Science (Washington, D.C.). 2010, Vol 330, Num 6004, pp 655-657, 3 p
- CODEN
- SCIEAS
- ISSN
- 0036-8075
- Scientific domain
- Multidisciplinary
- Publisher
- American Association for the Advancement of Science, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Alignement vertical Caractéristique optique Composé binaire Couche mince Densité élevée Diode électroluminescente Dispositif couche mince Dispositif optoélectronique Eclairement Electroluminescence Emission stimulée Graphène Matériau revêtu Nitrure de gallium Oxyde de zinc Procédé de transfert Température ambiante GaN ZnO Semiconducteur bande interdite nulle
- Keyword (en)
- Vertical alignment Optical characteristic Binary compound Thin film High density Light emitting diode Thin film device Optoelectronic device Illumination Electroluminescence Stimulated emission Graphene Coated material Gallium nitride Zinc oxide Transfer processing Room temperature Zero band gap semiconductors
- Keyword (es)
- Alineacíon vertical Característica óptica Compuesto binario Capa fina Densidad elevada Diodo electroluminescente Dispositivo capa delgada Dispositivo optoelectrónico Alumbrado Electroluminiscencia Emisión estimulada Graphene Material revestido Galio nitruro Zinc óxido Procesamiento de transferencia Temperatura ambiente
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23387217
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1126/science.1195403 
https://dx.doi.org/10.1126/science.1195403
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