Random variability modeling and its impact on scaled CMOS circuits
- Auteur
- YUN YE1 ; GUMMALLA, Samatha1 ; WANG, Chi-Chao1 ; CHAKRABARTI, Chaitali1 ; YU CAO1
[1] School of Electrical, Computer and Energy Engineering (ECEE), Arizona State University, Tempe, AZ 85287-5706, United States - Source
Journal of computational electronics (Print). 2010, Vol 9, Num 3-4, pp 108-113, 6 p ; ref : 15 ref
- ISSN
- 1569-8025
- Domaine scientifique
- Electronics
- Editeur
- Springer, Heidelberg
- Pays de publication
- Germany
- Type de document
- Article
- Langue
- English
- Mot clé auteur
- Atomistic simulation Inverter Line-edge roughness Oxide thickness fluctuation Predictive modeling Random dopant fluctuation SRAM performance variability Threshold variations
- Mot clé (fr)
- Analyse quantitative Circuit intégré CMOS Circuit intégré Conception compacte Conception optimale Couche oxyde Epaisseur Evaluation performance Extensibilité Fluctuation Miniaturisation Modélisation Mémoire accès direct statique Onduleur Rugosité Technologie MOS complémentaire Mémoire accès direct Mémoire non volatile
- Mot clé (en)
- Quantitative analysis CMOS integrated circuits Integrated circuit Compact design Optimal design Oxide layer Thickness Performance evaluation Scalability Fluctuations Miniaturization Modeling Static random access memory Inverter Roughness Complementary MOS technology Random access memory Non volatile memory
- Mot clé (es)
- Análisis cuantitativo Circuito integrado Concepción compacta Concepción optimal Capa óxido Espesor Evaluación prestación Estensibilidad Fluctuación Miniaturización Modelización Ondulador Rugosidad Tecnología MOS complementario Memoria acceso directo Memoria no volátil
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03D Appareillage électronique et fabrication. Composants passifs, circuits imprimés, connectique
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03F Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide / 001D03F06 Circuits intégrés / 001D03F06A Conception. Technologies. Analyse fonctionnement. Essais
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03F Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide / 001D03F06 Circuits intégrés / 001D03F06B Circuits intégrés par fonction (dont mémoires et processeurs)
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 23598953
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10825-010-0336-5 
https://dx.doi.org/10.1007/s10825-010-0336-5
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10825-010-0336-5\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:66:\"Random variability modeling and its impact on scaled CMOS circuits\";s:9:\"\u0000*\u0000jtitle\";s:44:\"Journal of computational electronics (Print)\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:1:\"9\";s:8:\"\u0000*\u0000issue\";s:3:\"3-4\";s:8:\"\u0000*\u0000spage\";s:3:\"108\";s:8:\"\u0000*\u0000epage\";s:3:\"113\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1569-8025\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"YUN YE\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"GUMMALLA, Samatha\";i:1;s:14:\"WANG, Chi-Chao\";i:2;s:21:\"CHAKRABARTI, Chaitali\";i:3;s:6:\"YU CAO\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:66:\"Random variability modeling and its impact on scaled CMOS circuits\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10825-010-0336-5\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:66:\"Random variability modeling and its impact on scaled CMOS circuits\";s:9:\"\u0000*\u0000jtitle\";s:44:\"Journal of computational electronics (Print)\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:1:\"9\";s:8:\"\u0000*\u0000issue\";s:3:\"3-4\";s:8:\"\u0000*\u0000spage\";s:3:\"108\";s:8:\"\u0000*\u0000epage\";s:3:\"113\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1569-8025\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"YUN YE\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"GUMMALLA, Samatha\";i:1;s:14:\"WANG, Chi-Chao\";i:2;s:21:\"CHAKRABARTI, Chaitali\";i:3;s:6:\"YU CAO\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:66:\"Random variability modeling and its impact on scaled CMOS circuits\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10825-010-0336-5\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
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"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10825-010-0336-5\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:66:\"Random variability modeling and its impact on scaled CMOS circuits\";s:9:\"\u0000*\u0000jtitle\";s:44:\"Journal of computational electronics (Print)\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:1:\"9\";s:8:\"\u0000*\u0000issue\";s:3:\"3-4\";s:8:\"\u0000*\u0000spage\";s:3:\"108\";s:8:\"\u0000*\u0000epage\";s:3:\"113\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1569-8025\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"YUN YE\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"GUMMALLA, Samatha\";i:1;s:14:\"WANG, Chi-Chao\";i:2;s:21:\"CHAKRABARTI, Chaitali\";i:3;s:6:\"YU CAO\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:66:\"Random variability modeling and its impact on scaled CMOS circuits\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Accès par Europe PubMed Central
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10825-010-0336-5\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:66:\"Random variability modeling and its impact on scaled CMOS circuits\";s:9:\"\u0000*\u0000jtitle\";s:44:\"Journal of computational electronics (Print)\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:1:\"9\";s:8:\"\u0000*\u0000issue\";s:3:\"3-4\";s:8:\"\u0000*\u0000spage\";s:3:\"108\";s:8:\"\u0000*\u0000epage\";s:3:\"113\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1569-8025\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"YUN YE\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"GUMMALLA, Samatha\";i:1;s:14:\"WANG, Chi-Chao\";i:2;s:21:\"CHAKRABARTI, Chaitali\";i:3;s:6:\"YU CAO\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:66:\"Random variability modeling and its impact on scaled CMOS circuits\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10825-010-0336-5\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:66:\"Random variability modeling and its impact on scaled CMOS circuits\";s:9:\"\u0000*\u0000jtitle\";s:44:\"Journal of computational electronics (Print)\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:1:\"9\";s:8:\"\u0000*\u0000issue\";s:3:\"3-4\";s:8:\"\u0000*\u0000spage\";s:3:\"108\";s:8:\"\u0000*\u0000epage\";s:3:\"113\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1569-8025\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"YUN YE\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"GUMMALLA, Samatha\";i:1;s:14:\"WANG, Chi-Chao\";i:2;s:21:\"CHAKRABARTI, Chaitali\";i:3;s:6:\"YU CAO\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:66:\"Random variability modeling and its impact on scaled CMOS circuits\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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