Random variability modeling and its impact on scaled CMOS circuits
- Author
- YUN YE1 ; GUMMALLA, Samatha1 ; WANG, Chi-Chao1 ; CHAKRABARTI, Chaitali1 ; YU CAO1
[1] School of Electrical, Computer and Energy Engineering (ECEE), Arizona State University, Tempe, AZ 85287-5706, United States - Source
Journal of computational electronics (Print). 2010, Vol 9, Num 3-4, pp 108-113, 6 p ; ref : 15 ref
- ISSN
- 1569-8025
- Scientific domain
- Electronics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Author keyword
- Atomistic simulation Inverter Line-edge roughness Oxide thickness fluctuation Predictive modeling Random dopant fluctuation SRAM performance variability Threshold variations
- Keyword (fr)
- Analyse quantitative Circuit intégré CMOS Circuit intégré Conception compacte Conception optimale Couche oxyde Epaisseur Evaluation performance Extensibilité Fluctuation Miniaturisation Modélisation Mémoire accès direct statique Onduleur Rugosité Technologie MOS complémentaire Mémoire accès direct Mémoire non volatile
- Keyword (en)
- Quantitative analysis CMOS integrated circuits Integrated circuit Compact design Optimal design Oxide layer Thickness Performance evaluation Scalability Fluctuations Miniaturization Modeling Static random access memory Inverter Roughness Complementary MOS technology Random access memory Non volatile memory
- Keyword (es)
- Análisis cuantitativo Circuito integrado Concepción compacta Concepción optimal Capa óxido Espesor Evaluación prestación Estensibilidad Fluctuación Miniaturización Modelización Ondulador Rugosidad Tecnología MOS complementario Memoria acceso directo Memoria no volátil
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23598953
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10825-010-0336-5 
https://dx.doi.org/10.1007/s10825-010-0336-5
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