Direct or indirect semiconductor: The role of stacking fault in h-BN
- Author
- YIN, J. L1 ; HU, M. L1 ; ZHIZHOU YU1 ; ZHANG, C. X1 ; SUN, L. Z1 ; ZHONG, J. X1
[1] Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Xiangtan 411105, Hunan, China - Source
Physica. B, Condensed matter. 2011, Vol 406, Num 11, pp 2293-2297, 5 p ; ref : 23 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Electronic property Hexagonal boron nitride Stacking fault
- Keyword (fr)
- Bande interdite Chaleur formation Densité charge Densité état électron Défaut empilement Méthode fonctionnelle densité Nitrure de bore Programme VASP Semiconducteur Structure électronique Zone Brillouin BN
- Keyword (en)
- Energy gap Heat of formation Charge density Electronic density of states Stacking faults Density functional method Boron nitride Vienna ab initio simulation package Semiconductor materials Electronic structure Brillouin zones
- Keyword (es)
- Boro nitruro Programa VASP
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72N Stacking faults and other planar or extended defects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A20 Electron density of states and band structure of crystalline solids / 001B70A20P Other inorganic compounds
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24129209
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physb.2011.03.059 
https://dx.doi.org/10.1016/j.physb.2011.03.059
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