Very Large Capacitance Enhancement in a Two-Dimensional Electron System
- Author
- LU LI1 ; RICHTER, C2 ; PAETEL, S2 ; KOPP, T2 ; MANNHART, J2 ; ASHOORI, R. C1
[1] Department of Physics, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139, United States
[2] Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg 86135, Germany - Source
Science (Washington, D.C.). 2011, Vol 332, Num 6031, pp 825-828, 4 p
- CODEN
- SCIEAS
- ISSN
- 0036-8075
- Scientific domain
- Multidisciplinary
- Publisher
- American Association for the Advancement of Science, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Capacité électrique Composant électronique Densité électron Dispositif puissance Diélectrique permittivité élevée Electronique faible puissance Grille transistor Mesure champ électrique Système 2 dimensions Température ambiante Transistor effet champ
- Keyword (en)
- Capacitance Electronic component Electron density Power device High k dielectric Low-power electronics Transistor gate Electric field measurement Two dimensional system Room temperature Field effect transistor
- Keyword (es)
- Capacitancia Componente electrónico Densidad electrón Dispositivo potencia Dieléctrico alta constante dieléctrica Rejilla transistor Sistema 2 dimensiones Temperatura ambiente Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24190029
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1126/science.1204168 
https://dx.doi.org/10.1126/science.1204168
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