Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices
- Author
- TANAKA, Akihiro1 ; ORITSUKI, Yasunori1 ; KIKUCHIHARA, Hideyuki1 ; MIYAKE, Masataka1 ; MATTAUSCH, Hans Jürgen1 ; MIURA-MATTAUSCH, Mitiko1 ; LIU, Y2 ; GREEN, Keith2
[1] Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, 739-8530, Japan
[2] SPICE Modeling Laboratory, Texas Instruments, Forest Lake, Dallas, TX 75266, United States - Source
I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 7, pp 2072-2080, 9 p ; ref : 21 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Compact model drift region high voltage MOSFET resistor model scalable surface-potential-based model
- Keyword (fr)
- Caractéristique courant tension Conception compacte Diffusion latérale Extensibilité Haute tension Modélisation Optimisation Potentiel surface Résistance électrique Structure MOS Tension polarisation Transistor MOSFET Transistor effet champ grille isolée Transistor haute tension
- Keyword (en)
- Voltage current curve Compact design Lateral diffusion Scalability High voltage Modeling Optimization Surface potential Resistor MOS structure Bias voltage MOSFET Isolated gate field effect transistor High voltage transistor
- Keyword (es)
- Característica corriente tensión Concepción compacta Difusión lateral Estensibilidad Alta tensión Modelización Optimización Potencial superficie Resistencia eléctrica(componente) Estructura MOS Voltage polarización Transistor efecto campo rejilla aislada Transistor alta tensión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24327659
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2011.2132135 
https://dx.doi.org/10.1109/TED.2011.2132135
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