Electronic and magnetic properties of silicon adsorption on graphene
- Author
- HU, C. H1 ; ZHENG, Y1 ; ZHANG, Y1 ; WU, S. Q1 ; WEN, Y. H1 ; ZHU, Z. Z1
[1] Department of Physics and Institute of Theoretical Physics and Astrophysics, Xiamen University, Xiamen 361005, China - Source
Solid state communications. 2011, Vol 151, Num 17, pp 1128-1130, 3 p ; ref : 23 ref
- CODEN
- SSCOA4
- ISSN
- 0038-1098
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- A. Surfaces and interfaces C. Point defects D. Electronic states
- Keyword (fr)
- Adatome Adsorption Degré recouvrement Densité état électron Défaut ponctuel Graphène Méthode fonctionnelle densité Propriété magnétique Semimétal Silicium Spin polarisé Stabilité structurale Structure électronique
- Keyword (en)
- Adatoms Adsorption Coverage rate Electronic density of states Point defects Graphene Density functional method Magnetic properties Semimetals Silicon Polarized spin Structure stability Electronic structure
- Keyword (es)
- Grado recubrimiento Graphene Spin polarizado Estabilidad estructural
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C22 Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24402800
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/j.ssc.2011.05.027 
https://dx.doi.org/10.1016/j.ssc.2011.05.027
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.ssc.2011.05.027\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:68:\"Electronic and magnetic properties of silicon adsorption on graphene\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Solid state communications\";s:9:\"\u0000*\u0000stitle\";s:18:\"Solid state commun\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"151\";s:8:\"\u0000*\u0000issue\";s:2:\"17\";s:8:\"\u0000*\u0000spage\";s:4:\"1128\";s:8:\"\u0000*\u0000epage\";s:4:\"1130\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0038-1098\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"HU\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:8:\"ZHENG, Y\";i:1;s:8:\"ZHANG, Y\";i:2;s:8:\"WU, S. Q\";i:3;s:9:\"WEN, Y. H\";i:4;s:9:\"ZHU, Z. Z\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSCOA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:68:\"Electronic and magnetic properties of silicon adsorption on graphene\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.ssc.2011.05.027\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:68:\"Electronic and magnetic properties of silicon adsorption on graphene\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Solid state communications\";s:9:\"\u0000*\u0000stitle\";s:18:\"Solid state commun\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"151\";s:8:\"\u0000*\u0000issue\";s:2:\"17\";s:8:\"\u0000*\u0000spage\";s:4:\"1128\";s:8:\"\u0000*\u0000epage\";s:4:\"1130\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0038-1098\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"HU\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:8:\"ZHENG, Y\";i:1;s:8:\"ZHANG, Y\";i:2;s:8:\"WU, S. Q\";i:3;s:9:\"WEN, Y. H\";i:4;s:9:\"ZHU, Z. Z\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSCOA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:68:\"Electronic and magnetic properties of silicon adsorption on graphene\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.ssc.2011.05.027\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.ssc.2011.05.027\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:68:\"Electronic and magnetic properties of silicon adsorption on graphene\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Solid state communications\";s:9:\"\u0000*\u0000stitle\";s:18:\"Solid state commun\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"151\";s:8:\"\u0000*\u0000issue\";s:2:\"17\";s:8:\"\u0000*\u0000spage\";s:4:\"1128\";s:8:\"\u0000*\u0000epage\";s:4:\"1130\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0038-1098\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"HU\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:8:\"ZHENG, Y\";i:1;s:8:\"ZHANG, Y\";i:2;s:8:\"WU, S. Q\";i:3;s:9:\"WEN, Y. H\";i:4;s:9:\"ZHU, Z. Z\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSCOA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:68:\"Electronic and magnetic properties of silicon adsorption on graphene\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.ssc.2011.05.027\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:68:\"Electronic and magnetic properties of silicon adsorption on graphene\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Solid state communications\";s:9:\"\u0000*\u0000stitle\";s:18:\"Solid state commun\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"151\";s:8:\"\u0000*\u0000issue\";s:2:\"17\";s:8:\"\u0000*\u0000spage\";s:4:\"1128\";s:8:\"\u0000*\u0000epage\";s:4:\"1130\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0038-1098\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"HU\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:8:\"ZHENG, Y\";i:1;s:8:\"ZHANG, Y\";i:2;s:8:\"WU, S. Q\";i:3;s:9:\"WEN, Y. H\";i:4;s:9:\"ZHU, Z. Z\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSCOA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:68:\"Electronic and magnetic properties of silicon adsorption on graphene\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.ssc.2011.05.027\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:68:\"Electronic and magnetic properties of silicon adsorption on graphene\";s:9:\"\u0000*\u0000jtitle\";s:26:\"Solid state communications\";s:9:\"\u0000*\u0000stitle\";s:18:\"Solid state commun\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"151\";s:8:\"\u0000*\u0000issue\";s:2:\"17\";s:8:\"\u0000*\u0000spage\";s:4:\"1128\";s:8:\"\u0000*\u0000epage\";s:4:\"1130\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0038-1098\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"HU\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:8:\"ZHENG, Y\";i:1;s:8:\"ZHANG, Y\";i:2;s:8:\"WU, S. Q\";i:3;s:9:\"WEN, Y. H\";i:4;s:9:\"ZHU, Z. Z\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSCOA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:68:\"Electronic and magnetic properties of silicon adsorption on graphene\";s:8:\"\u0000*\u0000place\";s:10:\"Kidlington\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"3\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
