Novel materials by atomic layer deposition and molecular layer deposition : PROGRESS AND FUTURE DIRECTIONS FOR ATOMIC LAYER DEPOSITION AND ALD-BASED CHEMISTRY
- Author
- LESKELÄ, Markku1 ; RITALA, Mikko1 ; NILSEN, Ola2
[1] University of Helsinki, Finland
[2] University of Oslo, Norway - Source
MRS bulletin. 2011, Vol 36, Num 11, pp 877-884, 8 p ; ref : 76 ref
- ISSN
- 0883-7694
- Scientific domain
- Mechanics acoustics; Metallurgy, welding; Polymers, paint and wood industries
- Publisher
- Materials Research Society, Warrendale, PA
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Antimoniure Conductivité électrique Couche ultramince Diélectrique permittivité élevée Fluorure Mécanisme croissance Mécanisme réaction Méthode ALE Oxyde Procédé dépôt Séléniure Tellurure
- Keyword (en)
- Antimonides Electrical conductivity Ultrathin films High k dielectric Fluorides Growth mechanism Reaction mechanism Atomic layer epitaxial growth Oxides Deposition process Selenides Tellurides
- Keyword (es)
- Dieléctrico alta constante dieléctrica Mecanismo crecimiento Mecanismo reacción Procedimiento revestimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25230563
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1557/mrs.2011.240 
https://dx.doi.org/10.1557/mrs.2011.240
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