Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
- Author
- BRITNELL, Liam1 ; GORBACHEV, Roman V2 ; CASTRO NEO, Antonio H7 ; LEIST, Jon8 ; GEIM, Andre K1 2 ; PONOMARENKO, Leonid A1 ; NOVOSELOV, Kostya S1 ; JALIL, Rashid2 ; BELLE, Branson D2 ; SCHEDIN, Fred2 ; KATSNELSON, Mikhail I3 ; EAVES, Laurence4 ; MOROZOV, Sergey V5 ; MAYOROV, Alexander S1 ; PEES, Nuno M. R6 7
[1] School of Physics & Astronomy and, University of Manchester, Manchester M13 9PL, United Kingdom
[2] Manchester Centre for Mesoscience & Nanotechnology, University of Manchester, Manchester M13 9PL, United Kingdom
[3] Institute for Molecules and Materials, Radboud University of Nijmegen, 6525 AJ Nijmegen, Netherlands
[4] School of Physics & Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
[5] Institute for Microelectronics Technology, 142432 Chemogolovka, Russian Federation
[6] Departamento de Fisica, Universidade do Minho, 4710-057, Braga, Portugal
[7] Graphene Research Centre and Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore
[8] Momentive Performance Materials, 22557 West Lunn Road, Strongsville, Ohio 4407, United States - Source
Nano letters (Print). 2012, Vol 12, Num 3, pp 1707-1710, 4 p ; ref : 18 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Champ intense Couche barrière Couche monomoléculaire Cristal hexagonal Densité porteur charge Densité élevée Disruption Effet dimensionnel Effet tunnel Graphite Graphène Microscopie force atomique Nitrure de bore Propriété électronique Transistor effet champ 7321 8105T 8105U 8530T BN Substrat or
- Keyword (en)
- High field Barrier layer Monolayers Hexagonal crystals Carrier density High density Breakdown Size effect Tunnel effect Graphite Graphene Atomic force microscopy Boron nitride Electronic properties Field effect transistors
- Keyword (es)
- Cristal hexagonal Densidad elevada Graphene Boro nitruro Propiedad electrónica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25615418
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl3002205 
https://dx.doi.org/10.1021/nl3002205
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