Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
- Author
- ZHIWEI LI1 ; HONGYUAN WEI1 ; XIAOQING XU1 ; GUIJUAN ZHAO1 ; XIANGLIN LIU1 ; SHAOYAN YANG1 ; QINSHENG ZHU1 ; ZHANGUO WANG1
[1] Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. 912, Beijing 10083, China - Source
Journal of crystal growth. 2012, Vol 348, Num 1, pp 10-14, 5 p ; ref : 21 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- A3. MOCVD B1. Nitrides B1. a-plane GaN B2. Semi-conducting III-V materials
- Keyword (fr)
- Composé III-V Couche intermédiaire Couche tampon Couche épitaxique Diffraction RX Echelle nanométrique Epitaxie Formation nanomotif Microscopie électronique balayage Morphologie surface Mécanisme croissance Méthode MOCVD Nanostructure Nitrure d'indium Nitrure de gallium Photoluminescence Recuit Réaction dirigée Semiconducteur III-V Spectrométrie Raman 8115G 8116R GaN InGaN Substrat GaN Substrat saphir
- Keyword (en)
- III-V compound Interlayers Buffer layer Epitaxial layers XRD Nanometer scale Epitaxy Nanopatterning Scanning electron microscopy Surface morphology Growth mechanism MOCVD Nanostructures Indium nitride Gallium nitride Photoluminescence Annealing Template reaction III-V semiconductors Raman spectroscopy
- Keyword (es)
- Compuesto III-V Capa tampón Formacíon nanomotivo Mecanismo crecimiento Indio nitruro Galio nitruro Reacción dirigida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16R Nanoscale pattern formation
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25928314
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2012.03.051 
https://dx.doi.org/10.1016/j.jcrysgro.2012.03.051
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