Considerations for Ultimate CMOS Scaling
- Author
- KUHN, Kelin J1
[1] Intel Corporation, Hillsboro, OR 97124, United States - Source
I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 7, pp 1813-1828, 16 p ; ref : 189 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- -Complementary metal-oxide semiconductor (CMOS) FinFET mobility nanowire silicon on insulator (SOI) strain
- Keyword (fr)
- Capacité électrique Dispositif nanofil Grille transistor Multicouche Nanofil Technologie MOS complémentaire Technologie autoalignée Technologie silicium sur isolant Transistor MOS complémentaire Transistor MOSFET Transistor effet champ Transistor grille double 8107V
- Keyword (en)
- Capacitance Nanowire device Transistor gate Multiple layer Nanowires Complementary MOS technology Self aligned technology Silicon on insulator technology Complementary MOS transistor MOSFET Field effect transistor Dual gate transistor
- Keyword (es)
- Capacitancia Dispositivo nanohilo Rejilla transistor Capa múltiple Tecnología MOS complementario Tecnología rejilla autoalineada Tecnología silicio sobre aislante Transistor MOS complementario Transistor efecto campo Transistor de compuerta doble
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26015590
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2012.2193129 
https://dx.doi.org/10.1109/TED.2012.2193129
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