A Scalable Electrothermal Model for Transient Self-Heating Effects in Trench-Isolated SiGe HBTs
- Author
- AMIT KUMAR SAHOO1 ; FREGONESE, Sébastien1 ; WEISS, Mario1 ; MALBERT, Nathalie1 ; ZIMMER, Thomas1
[1] IMS Laboratory, CNRS UMR 5218, Université Bordeaux 1, 33405 Talence, France - Source
I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 10, pp 2619-2625, 7 p ; ref : 26 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- -Bipolar transistors electrothermal effects numerical simulation semiconductor device modeling thermal impedance measurements thermal resistance
- Keyword (fr)
- Alliage Ge Si Alliage binaire Autoéchauffement Basse fréquence Comportement thermique Conception assistée Conception circuit Conception compacte Dispositif semiconducteur Estimation paramètre Extensibilité Impédance Mesure fréquence Modèle 3 dimensions Modèle thermique Modélisation Méthode domaine fréquence Méthode récursive Paramètre s Résistance thermique Simulation numérique Source chaleur Technologie tranchée Transistor bipolaire hétérojonction Transistor bipolaire 0630F SiGe
- Keyword (en)
- Ge-Si alloys Binary alloy Self heating Low frequency Thermal behavior Computer aided design Circuit design Compact design Semiconductor device Parameter estimation Scalability Impedance Frequency measurement Three dimensional model Thermal model Modeling Frequency domain method Recursive method s parameter Thermal resistance Numerical simulation Heat source Trench technology Heterojunction bipolar transistors Bipolar transistor
- Keyword (es)
- Aleación binaria Autocalentamiento Baja frecuencia Comportamiento térmico Concepción asistida Diseño circuito Concepción compacta Dispositivo semiconductor Estimación parámetro Estensibilidad Impedancia Medición frecuencia Modelo 3 dimensiones Modelo térmico Modelización Método dominio frecuencia Método recursivo Parámetro s Resistencia térmica Simulación numérica Fuente calor Tecnología trinchera Transistor bipolar
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00F Metrology, measurements and laboratory procedures / 001B00F30 Measurements common to several branches of physics and astronomy / 001B00F30F Time and frequency
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26443048
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2012.2209651 
https://dx.doi.org/10.1109/TED.2012.2209651
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