A Self-Rectifying AlOy Bipolar RRAM With Sub-50-μA Set/Reset Current for Cross-Bar Architecture
- Author
- TRAN, X. A1 ; ZHU, W1 ; LIU, W. J1 ; YEO, Y. C2 ; NGUYEN, B. Y3 ; HONG YU YU4
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
[2] Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
[3] Soitec, 38926 Crolles, France
[4] South University of Science and Technology of China, Shenzhen 518055, China - Source
IEEE electron device letters. 2012, Vol 33, Num 10, pp 1402-1404, 3 p ; ref : 15 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Bipolar resistive random access memory (RRAM) resistive switching (RS) self-rectifying
- Keyword (fr)
- Circuit intégré Effet on off Electronique de mesure Evaluation performance Facteur rétention Mémoire accès direct Méthode cas pire Transistor Transition conductivité électrique Mémoire non volatile
- Keyword (en)
- Integrated circuit On off effect Readout electronics Performance evaluation Retention factor Random access memory Worst case method Transistor Electrical conductivity transitions Non volatile memory
- Keyword (es)
- Circuito integrado Efecto on off Evaluación prestación Factor retención Memoria acceso directo Método caso peor Transistor Memoria no volátil
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26443133
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2012.2210855 
https://dx.doi.org/10.1109/LED.2012.2210855
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