Ultralow Surface Recombination Velocity in InP Nanowires Probed by Terahertz Spectroscopy
- Author
- JOYCE, Hannah J1 ; WONG-LEUNG, Jennifer2 ; JOHNSTON, Michael B1 ; YONG, Chaw-Keong1 ; DOCHERTY, Callum J1 ; PAIMAN, Suriati2 3 ; QIANG GAO2 ; HOE TAN, H2 ; JAGADISH, Chennupati2 ; LLOYD-HUGHES, James1 ; HERZ, Laura M1
[1] Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, United Kingdom
[2] Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia
[3] Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia - Source
Nano letters (Print). 2012, Vol 12, Num 10, pp 5325-5330, 6 p ; ref : 42 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aire superficielle Composé III-V Dispositif nanofil Dispositif optoélectronique Dispositif photovoltaïque Domaine fréquence THz Durée vie porteur charge Durée vie Défaut empilement Défaut plan Etat surface Mesure température Mobilité porteur charge Nanofil Nanomatériau Phosphure d'indium Photoconductivité Phénomène transitoire Propriété électrique Recombinaison superficielle Semiconducteur III-V 8107B 8107V 8535 8535K InP
- Keyword (en)
- Surface area III-V compound Nanowire device Optoelectronic devices Photovoltaic cell THz range Carrier lifetime Lifetime Stacking faults Plane defects Surface states Temperature measurement Carrier mobility Nanowires Nanostructured materials Indium phosphide Photoconductivity Transients Electrical properties Surface recombination III-V semiconductors
- Keyword (es)
- Compuesto III-V Dispositivo nanohilo Dispositivo fotovoltaico Indio fosfuro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26450856
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl3026828 
https://dx.doi.org/10.1021/nl3026828
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