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Non-hydrolytic ester-elimination reaction and its application in solution-processed zinc tin oxide thin film transistors

Author
YOUNG BUM YOO1 ; JEE HO PARK1 ; KIE MOON SONG2 ; SE JONG LEE3 ; HONG KOO BAIK1
[1] Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Korea, Republic of
[2] Department of Applied Physics, Konkuk University, Chungju 380-701, Korea, Republic of
[3] Department of Materials Science and Engineering, Kyungsung University, Busan 608-736, Korea, Republic of
Source

Journal of sol-gel science and technology. 2012, Vol 64, Num 1, pp 257-263, 7 p ; ref : 23 ref

ISSN
0928-0707
Scientific domain
General chemistry, physical chemistry; Condensed state physics
Publisher
Springer, Heidelberg
Publication country
Germany
Document type
Article
Language
English
Author keyword
Ester elimination Non-hydrolytic sol―gel Thin film transistor Zinc tin oxide
Keyword (fr)
Basse température Composé de métal de transition Composé ternaire Couche mince Dispositif Energie Ester Etain Oxyde Film Force Haute température Mobilité Procédé sol gel Précurseur Recuit Zinc Oxyde
Keyword (en)
Low temperature Transition element compounds Ternary compound Thin film Device Energy Ester Tin Oxides Film Force High temperature Mobility Sol gel process Precursor Annealing Zinc Oxides
Keyword (es)
Baja temperatura Compuesto ternario Capa fina Dispositivo Energía Ester Estaño Óxido Película Fuerza Alta temperatura Movilidad Procedimiento sol gel Precursor Recocido Zinc Óxido
Classification
Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01J Colloidal state and disperse state / 001C01J05 Colloidal gels. Colloidal sols

Discipline
General chemistry and physical chemistry
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
26496110

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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