Anomalous Zero-Bias Conductance Peak in a Nb―InSb Nanowire―Nb Hybrid Device
- Author
- DENG, M. T1 ; YU, C. L1 ; HUANG, G. Y1 ; LARSSON, M1 ; CAROFF, P2 ; XU, H. Q1 3
[1] Division of Solid State Physics, Lund University, Box 118, 221 00 Lund, Sweden
[2] I.E.M.N., UMR CNRS 8520, Avenue Poincaré, BP 60069, 59652 Villeneuve d'Ascq, France
[3] Department of Electronics and Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China - Source
Nano letters (Print). 2012, Vol 12, Num 12, pp 6414-6419, 6 p ; ref : 35 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Antimoniure d'indium Bande interdite Blocage Coulomb Composé III-V Dispositif nanofil Effet proximité Effet tunnel Electrode commande Nanofil Nanomatériau Niveau Fermi Point quantique Semiconducteur III-V Structure électronique Supraconducteur Séléniure de calcium Tellurure de gallium Tension polarisation Valeur critique 8107B 8107T 8107V 8535K CaSe InSb
- Keyword (en)
- Indium antimonides Energy gap Coulomb blockade III-V compound Nanowire device Proximity effect Tunnel effect Gates Nanowires Nanostructured materials Fermi level Quantum dot III-V semiconductors Electronic structure Superconducting materials Calcium selenides Gallium tellurides Bias voltage Critical value
- Keyword (es)
- Banda prohibida Bloqueo Coulomb Compuesto III-V Dispositivo nanohilo Efecto proximidad Efecto túnel Nivel Fermi Punto cuántico Estructura electrónica Supraconductor Voltage polarización Valor crítico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 26748863
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl303758w 
https://dx.doi.org/10.1021/nl303758w
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/nl303758w\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:79:\"Anomalous Zero-Bias Conductance Peak in a Nb\u2015InSb Nanowire\u2015Nb Hybrid Device\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Nano letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:18:\"Nano lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"12\";s:8:\"\u0000*\u0000issue\";s:2:\"12\";s:8:\"\u0000*\u0000spage\";s:4:\"6414\";s:8:\"\u0000*\u0000epage\";s:4:\"6419\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1530-6984\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"DENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:8:\"YU, C. L\";i:1;s:11:\"HUANG, G. Y\";i:2;s:10:\"LARSSON, M\";i:3;s:9:\"CAROFF, P\";i:4;s:8:\"XU, H. Q\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:79:\"Anomalous Zero-Bias Conductance Peak in a Nb\u2015InSb Nanowire\u2015Nb Hybrid Device\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/nl303758w\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:79:\"Anomalous Zero-Bias Conductance Peak in a Nb\u2015InSb Nanowire\u2015Nb Hybrid Device\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Nano letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:18:\"Nano lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"12\";s:8:\"\u0000*\u0000issue\";s:2:\"12\";s:8:\"\u0000*\u0000spage\";s:4:\"6414\";s:8:\"\u0000*\u0000epage\";s:4:\"6419\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1530-6984\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"DENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:8:\"YU, C. L\";i:1;s:11:\"HUANG, G. Y\";i:2;s:10:\"LARSSON, M\";i:3;s:9:\"CAROFF, P\";i:4;s:8:\"XU, H. Q\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:79:\"Anomalous Zero-Bias Conductance Peak in a Nb\u2015InSb Nanowire\u2015Nb Hybrid Device\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/nl303758w\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/nl303758w\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:79:\"Anomalous Zero-Bias Conductance Peak in a Nb\u2015InSb Nanowire\u2015Nb Hybrid Device\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Nano letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:18:\"Nano lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"12\";s:8:\"\u0000*\u0000issue\";s:2:\"12\";s:8:\"\u0000*\u0000spage\";s:4:\"6414\";s:8:\"\u0000*\u0000epage\";s:4:\"6419\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1530-6984\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"DENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:8:\"YU, C. L\";i:1;s:11:\"HUANG, G. Y\";i:2;s:10:\"LARSSON, M\";i:3;s:9:\"CAROFF, P\";i:4;s:8:\"XU, H. Q\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:79:\"Anomalous Zero-Bias Conductance Peak in a Nb\u2015InSb Nanowire\u2015Nb Hybrid Device\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/nl303758w\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:79:\"Anomalous Zero-Bias Conductance Peak in a Nb\u2015InSb Nanowire\u2015Nb Hybrid Device\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Nano letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:18:\"Nano lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"12\";s:8:\"\u0000*\u0000issue\";s:2:\"12\";s:8:\"\u0000*\u0000spage\";s:4:\"6414\";s:8:\"\u0000*\u0000epage\";s:4:\"6419\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1530-6984\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"DENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:8:\"YU, C. L\";i:1;s:11:\"HUANG, G. Y\";i:2;s:10:\"LARSSON, M\";i:3;s:9:\"CAROFF, P\";i:4;s:8:\"XU, H. Q\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:79:\"Anomalous Zero-Bias Conductance Peak in a Nb\u2015InSb Nanowire\u2015Nb Hybrid Device\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/nl303758w\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:79:\"Anomalous Zero-Bias Conductance Peak in a Nb\u2015InSb Nanowire\u2015Nb Hybrid Device\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Nano letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:18:\"Nano lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"12\";s:8:\"\u0000*\u0000issue\";s:2:\"12\";s:8:\"\u0000*\u0000spage\";s:4:\"6414\";s:8:\"\u0000*\u0000epage\";s:4:\"6419\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1530-6984\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"DENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:8:\"YU, C. L\";i:1;s:11:\"HUANG, G. Y\";i:2;s:10:\"LARSSON, M\";i:3;s:9:\"CAROFF, P\";i:4;s:8:\"XU, H. Q\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:79:\"Anomalous Zero-Bias Conductance Peak in a Nb\u2015InSb Nanowire\u2015Nb Hybrid Device\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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