Temperature dependence of forward and reverse bias current―voltage characteristics in Al―TiW―PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier
- Author
- AFANDIYEVA, I. M1 ; DEMIREZEN, S2 ; ALTINDAL, S2
[1] Institute for Physics Problems, Baku State University, AZ 1148, Baku, Azerbaijan
[2] Physics Department, Faculty of Sciences, Gazi University, 06500 Teknikokullar, Ankara, Turkey - Source
Journal of alloys and compounds. 2013, Vol 552, pp 423-429, 7 p ; ref : 48 ref
- ISSN
- 0925-8388
- Scientific domain
- Inorganic chemistry; Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Barrier inhomogeneities Gaussian distribution Intersection point MS structures PtSi/n-Si contacts
- Keyword (fr)
- Barrière Schottky Caractéristique courant tension Effet non linéaire Emission thermoionique Hauteur barrière Loi Gauss Pulvérisation cathodique Réseau hexagonal Semiconducteur Silicium Surface contact
- Keyword (en)
- Schottky barriers IV characteristic Non linear effect Thermionic emission Barrier height Gaussian distribution Cathode sputtering Hexagonal lattices Semiconductor materials Silicon Contact surface
- Keyword (es)
- Efecto no lineal Superficie contacto
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C30 Surface double layers, schottky barriers, and work functions
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27113789
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jallcom.2012.11.093 
https://dx.doi.org/10.1016/j.jallcom.2012.11.093
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