Electronic structure of one-dimensional bismuth oxide, BiCu2VO6
- Author
- CHO, Sungwoo1 ; LEE, In-Ja2 ; JUNG, Dongwoon1
[1] Department of Chemistry, Wonkwang University, Iksan, Jeonbuk 570-749, Korea, Republic of
[2] Department of Advanced Materials Chemistry, Dongguk University, Gyeongju, Gyeongbuk 780-714, Korea, Republic of - Source
Solid state sciences. 2013, Vol 17, pp 111-114, 4 p ; ref : 17 ref
- ISSN
- 1293-2558
- Scientific domain
- Crystallography
- Publisher
- Elsevier Masson, Issy-les-Moulineaux
- Publication country
- France
- Document type
- Article
- Language
- English
- Author keyword
- Band calculation Bismuth oxide Dimensionality Phase transition
- Keyword (fr)
- Approximation liaison forte Conduction électronique Conductivité type n Conductivité électrique Cuivre Densité état électron Dimensionnalité Direction cristallographique Electron conduction Etude théorique Méthode Hückel généralisée Méthode Hückel Niveau Fermi Orientation cristalline Oxyde de bismuth Structure bande Structure électronique Surface Fermi Transition phase 7118
- Keyword (en)
- Tight binding approximation Electronic conduction N type conductivity Electrical conductivity Copper Electronic density of states Dimensionality Crystallographic direction Conduction electron Theoretical study Extended Hueckel method Hueckel method Fermi level Crystal orientation Bismuth oxide Band structure Electronic structure Fermi surface Phase transitions
- Keyword (es)
- Conducción electrónica Conductividad tipo n Dimensionalidad Dirección cristalográfica Electrón conducción Método Huckel generalizado Método Huckel Bismuto óxido Transición fase
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A18 Fermi surface: calculations and measurements; effective mass, g factor
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27114233
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.solidstatesciences.2012.12.007 
https://dx.doi.org/10.1016/j.solidstatesciences.2012.12.007
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:40:\"10.1016\/j.solidstatesciences.2012.12.007\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"Electronic structure of one-dimensional bismuth oxide, BiCu2VO6\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Solid state sciences\";s:9:\"\u0000*\u0000stitle\";s:15:\"Solid state sci\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"17\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"111\";s:8:\"\u0000*\u0000epage\";s:3:\"114\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1293-2558\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"CHO\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Sungwoo\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:10:\"LEE, In-Ja\";i:1;s:14:\"JUNG, Dongwoon\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:63:\"Electronic structure of one-dimensional bismuth oxide, BiCu2VO6\";s:8:\"\u0000*\u0000place\";s:19:\"Issy-les-Moulineaux\";s:6:\"\u0000*\u0000pub\";s:15:\"Elsevier Masson\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:40:\"10.1016\/j.solidstatesciences.2012.12.007\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"Electronic structure of one-dimensional bismuth oxide, BiCu2VO6\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Solid state sciences\";s:9:\"\u0000*\u0000stitle\";s:15:\"Solid state sci\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"17\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"111\";s:8:\"\u0000*\u0000epage\";s:3:\"114\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1293-2558\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"CHO\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Sungwoo\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:10:\"LEE, In-Ja\";i:1;s:14:\"JUNG, Dongwoon\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:63:\"Electronic structure of one-dimensional bismuth oxide, BiCu2VO6\";s:8:\"\u0000*\u0000place\";s:19:\"Issy-les-Moulineaux\";s:6:\"\u0000*\u0000pub\";s:15:\"Elsevier Masson\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:40:\"10.1016\/j.solidstatesciences.2012.12.007\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:40:\"10.1016\/j.solidstatesciences.2012.12.007\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"Electronic structure of one-dimensional bismuth oxide, BiCu2VO6\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Solid state sciences\";s:9:\"\u0000*\u0000stitle\";s:15:\"Solid state sci\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"17\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"111\";s:8:\"\u0000*\u0000epage\";s:3:\"114\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1293-2558\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"CHO\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Sungwoo\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:10:\"LEE, In-Ja\";i:1;s:14:\"JUNG, Dongwoon\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:63:\"Electronic structure of one-dimensional bismuth oxide, BiCu2VO6\";s:8:\"\u0000*\u0000place\";s:19:\"Issy-les-Moulineaux\";s:6:\"\u0000*\u0000pub\";s:15:\"Elsevier Masson\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:40:\"10.1016\/j.solidstatesciences.2012.12.007\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"Electronic structure of one-dimensional bismuth oxide, BiCu2VO6\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Solid state sciences\";s:9:\"\u0000*\u0000stitle\";s:15:\"Solid state sci\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"17\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"111\";s:8:\"\u0000*\u0000epage\";s:3:\"114\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1293-2558\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"CHO\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Sungwoo\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:10:\"LEE, In-Ja\";i:1;s:14:\"JUNG, Dongwoon\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:63:\"Electronic structure of one-dimensional bismuth oxide, BiCu2VO6\";s:8:\"\u0000*\u0000place\";s:19:\"Issy-les-Moulineaux\";s:6:\"\u0000*\u0000pub\";s:15:\"Elsevier Masson\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:40:\"10.1016\/j.solidstatesciences.2012.12.007\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"Electronic structure of one-dimensional bismuth oxide, BiCu2VO6\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Solid state sciences\";s:9:\"\u0000*\u0000stitle\";s:15:\"Solid state sci\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"17\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"111\";s:8:\"\u0000*\u0000epage\";s:3:\"114\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1293-2558\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"CHO\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Sungwoo\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:10:\"LEE, In-Ja\";i:1;s:14:\"JUNG, Dongwoon\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:63:\"Electronic structure of one-dimensional bismuth oxide, BiCu2VO6\";s:8:\"\u0000*\u0000place\";s:19:\"Issy-les-Moulineaux\";s:6:\"\u0000*\u0000pub\";s:15:\"Elsevier Masson\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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