The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-In₂Ga₂ZnO₇

Author

SANG HO RHA^{1 2} ; UN KI KIM³ ; JUNG, Jisim³ ; HYO KYEOM KIM³ ; YOON SOO JUNG^{4 5} ; EUN SUK HWANG³ ; YOON JANG CHUNG⁶ ; LEE, Mijung⁷ ; CHOI, Jung-Hae⁸ ; CHEOL SEONG HWANG³
[1] Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 443-270, Korea, Republic of
[2] Advanced Module Technology Development Project, Semiconductor R&D Center, Samsung Electronics Company, Ltd., Seoul 446-712, Korea, Republic of
[3] World Class University Hybrid Materials Program, Department of Materials Science and Engineering and Interuniversity Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea, Republic of
[4] Class University Hybrid Materials Program, Department of Materials Science and Engineering and Interuniversity Semiconductor Research Center. Seoul National University, Seoul 151-744, Korea, Republic of
[5] Korea Institute of Science and Technology, Seoul 136-791, Korea, Republic of
[6] Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea, Republic of
[7] School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702, Korea, Republic of
[8] Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea, Republic of

Source

I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 3, pp 1128-1135, 8 p ; ref : 23 ref

CODEN

IETDAI

ISSN

0018-9383

Scientific domain

Electronics

Publisher

Institute of Electrical and Electronics Engineers, New York, NY

Publication country

United States

Document type

Article

Language

English

Author keyword

-Amorphous indium-gallium―zinc oxide (a-IGZO) Schottky contact thin-film transistors (TFTs)

Keyword (fr)

Barrière Schottky Caractéristique transfert Caractéristique électrique Contact électrique Couche accumulation Courant drain Diode barrière Schottky Effet redresseur Evaluation performance Matériau amorphe Oxyde d'indium Oxyde de gallium Oxyde de zinc Surface arrière Tension drain Transistor couche mince NiPt

Keyword (en)

Schottky barrier Transfer characteristic Electrical characteristic Electric contact Enhancement layer Drain current Schottky barrier diode Rectifier effect Performance evaluation Amorphous material Indium oxide Gallium oxide Zinc oxide Back surface Drain voltage Thin film transistor

Keyword (es)

Barrera Schottky Característica transferencia Característica eléctrica Contacto eléctrico Capa acumulación Corriente dren Diodo barrera Schottky Efecto rectificador Evaluación prestación Material amorfo Indio óxido Galio óxido Zinc óxido Superficie atrás Tensión dren Transistor capa delgada

Classification

Pascal

001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Pascal

001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes

Pascal

001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline

Electronics

Origin

Inist-CNRS

Database

PASCAL

INIST identifier

27129708

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