High Performance Multilayer MoS2 Transistors with Scandium Contacts
- Author
- DAS, Saptarshi1 ; CHEN, Hong-Yan1 ; PENUMATCHA, Ashish Verma1 ; APPENZELLER, Joerg1
[1] Birck Nanotechnology Center & Department of ECE, Purdue University, West Lafayette, Indiana, United States - Source
Nano letters (Print). 2013, Vol 13, Num 1, pp 100-105, 6 p ; ref : 39 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique courant tension Contact ohmique Couche mince Couche multimoléculaire Courant drain Graphène Multicouche Oxyde d'aluminium Résistance contact Scandium Sulfure de molybdène Transistor 7340C 8105T 8105U 8535 Al2O3 MoS2 Sc
- Keyword (en)
- Voltage current curve Ohmic contact Thin film Multilayer Drain current Graphene Multiple layer Aluminium oxide Contact resistance Scandium Molybdenum sulfide Transistor
- Keyword (es)
- Característica corriente tensión Contacto óhmico Capa fina Capa multimolecular Corriente dren Graphene Capa múltiple Aluminio óxido Resistencia contacto Escandio Molibdeno sulfuro Transistor
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40C Contact resistance, contact potential
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27145454
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl303583v 
https://dx.doi.org/10.1021/nl303583v
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