High-Temperature Oxidation of SiC-Based Composite: Rate Constant Calculation from ReaxFF MD Simulations, Part II
- Author
- NEWSOME, David A1 ; SENGUPTA, Debasis1 ; VAN DUIN, Adri C. T2
[1] CFD Research Corp., 215 Wynn Drive, Huntsville, Alabama 35805, United States
[2] Department of Mechanical and Nuclear Engineering, Penn State University, 136 Research Building East, University Park, Pennsylvania 16802, United States - Source
Journal of physical chemistry. C. 2013, Vol 117, Num 10, pp 5114-5127, 14 p ; ref : 69 ref
- Publisher
- American Chemical Society, Columbus, OH
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Analyse activation Brûlage Caoutchouc EPDM Carbure de silicium Constante vitesse Diffusivité Distribution concentration Equation Arrhenius Haute température Matériau composite Méthode dynamique moléculaire Oxydation
- Keyword (en)
- Activation analysis Burning Ethylene propylene diene polymers Silicon carbide Rate constant Diffusivity Concentration distribution Arrhenius equation High temperature Composite materials Molecular dynamics method Oxidation
- Keyword (es)
- Quema Silicio carburo Constante velocidad Distribución concentración Alta temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27170336
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/jp307680t 
https://dx.doi.org/10.1021/jp307680t
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