Low defect interface study of intrinsic layer for c-Si surface passivation in a-Si:H/c-Si heterojunction solar cells

Author

KIM, Sangho¹ ; VINH AI DAO^{2 3} ; SHIN, Chonghoon¹ ; CHO, Jaehyun² ; LEE, Youngseok¹ ; BALAJI, Nagarajan¹ ; AHN, Shihyun² ; KIM, Youngkuk² ; YI, Junsin^{1 2}
[1] Department of Energy Science, Sungkyunkwan University, Suwon, 440-746, Korea, Republic of
[2] School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746, Korea, Republic of
[3] Faculty of Materials Science, College of Science, Vietnam National University, Hochiminh, Viet NamUS, United States

Conference title

The 3rd International Conference on Microelectronics and Plasma Technology (ICMAP) 2011

Conference name

ICMAP 2011 International Conference on Microelectronics and Plasma Technology (Dalian 2011-07-04)

Author (monograph)

LEE, Nae-Eung (Editor)¹ ; SHI, J. J (Editor)² ; KINOSHITA, Keijo (Editor)⁹ ; NOZAKI, Tomohiro (Editor)¹⁰ ; FUJIWARA, Nobuo (Editor)¹¹ ; HOU, L. J (Editor)¹² ; ZHANG, X. D (Editor)³ ; TU, Y (Editor)⁴ ; XIN, Y (Editor)¹³ ; LI, S. Z (Editor)⁵ ; JI HYUN KIM (Editor)⁶ ; KIM, Hyung-Sub (Editor)¹ ; LEE, Taeyoon (Editor)⁷ ; TOYODA, Hirokata (Editor)⁸
[1] Sungkyunkwan University, Korea, Republic of
[2] Donghua University, China
[3] Nankia University, China
[4] Southeast University, China
[5] Dalian University of Technology, China
[6] Korea University, Korea, Republic of
[7] Yonsei University, Korea, Republic of
[8] Nagoya University, Japan
[9] NEC, Japan
[10] Tokyo Institute of Technology, Japan
[11] Mitsubishi Electric, Japan
[12] Max Planck Institute for Extraterrestrial Physics, Germany
[13] Suzhou University, China

Source

Thin solid films. 2012, Vol 521, pp 45-49, 5 p ; ref : 16 ref

CODEN

THSFAP

ISSN

0040-6090

Scientific domain

Crystallography; Metallurgy, welding; Condensed state physics

Publisher

Elsevier, Amsterdam

Publication country

Netherlands

Document type

Conference Paper

Language

English

Author keyword

Fraction depletion Heterojunction solar cells Passivation Spectroscopy ellipsometry VHF-PECVD

Keyword (fr)

Cavité dans réseau Cellule solaire Composé organique volatil Couche mince Densité courant Durée vie Défaut cristallin Effet pression Ellipsométrie spectroscopique Epitaxie Hétérojonction Interface Matériau amorphe hydrogéné Méthode PECVD Silicium 0760F 6172Q 8115G 8460J Couche mince amorphe hydrogénée Si a-C:H a-Si:H μc-Si:H

Keyword (en)

Void Solar cell Volatile organic compound Thin film Current density Lifetime Crystal defect Pressure effect Spectroscopic ellipsometry Epitaxy Heterojunction Interface Amorphous hydrogenated material PECVD Silicon

Keyword (es)

Cavidad en red Célula solar Compuesto orgánico volátil Capa fina Densidad corriente Tiempo vida Defecto cristalino Efecto presión Elipsometría espectroscópica Epitaxia Heterounión Interfase Material amorfo hidrogenado Silicio

Classification

Pascal

001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G60 Optical instruments, equipment and techniques / 001B00G60F Polarimeters and ellipsometers

Pascal

001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pascal

001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells

Discipline

Energy Metrology Physics and materials science Physics of condensed state : structure, mechanical and thermal properties

Origin

Inist-CNRS

Database

PASCAL

INIST identifier

27189237

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS