Pseudo Hall―Petch Strength Reduction in Polycrystalline Graphene
- Author
- ZHIGONG SONG1 ; ARTYUKHOV, Vasilii I2 ; YAKOBSON, Boris I2 ; ZHIPING XU1
[1] Department of Engineering Mechanics and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China
[2] Department of Mechanical Engineering and Materials Science, Department of Chemistry, and the Richard E. Smalley Institute for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, United States - Source
Nano letters (Print). 2013, Vol 13, Num 4, pp 1829-1833, 5 p ; ref : 37 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Dislocation Défaut cristallin Effet Hall Etude théorique Fracture Graphène Grosseur grain Joint grain Module élasticité Méthode dynamique moléculaire Polycristal Propriété électrique Résistance traction Simulation numérique 6225 8105T 8105U
- Keyword (en)
- Dislocations Crystal defects Hall effect Theoretical study Fractures Graphene Grain size Grain boundaries Elastic modulus Molecular dynamics method Polycrystals Electrical properties Tensile strength Digital simulation
- Keyword (es)
- Graphene
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60B Mechanical and acoustical properties of condensed matter / 001B60B25 Mechanical properties of nanoscale materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27275334
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl400542n 
https://dx.doi.org/10.1021/nl400542n
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