Laser directed lithography of asymmetric graphene ribbons on a polydimethylsiloxane trench structure
- Author
- HE TIAN1 2 ; YI YANG1 ; ZHANG, Cang-Hai1 ; YUEGANG ZHANG2 ; DAN XIE1 ; REN, Tian-Ling1 ; YI SHU1 ; HUI SUN1 ; ZHOU, Chang-Jian1 ; XUAN LIU1 ; TAO, Lu-Qi1 ; JIE GE1
[1] Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, China
[2] The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, United States - Source
PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 18, pp 6825-6830, 6 p ; ref : 38 ref
- Publisher
- Royal Society of Chemistry, Cambridge
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Graphène Laser Lithographie Siloxane(diméthyl) polymère
- Keyword (en)
- Graphene Lasers Lithography Dimethylsiloxane polymer
- Keyword (es)
- Graphene Siloxano(dimetil) polímero
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27308005
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1039/c3cp50538c 
https://dx.doi.org/10.1039/c3cp50538c
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