Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation
- Author
- KUBOTA, Tomohiro1 ; OHTAKE, Hiroto1 ; ARAKI, Ryosuke1 ; YANAGISAWA, Yuuki1 ; IWASAKI, Takuya2 ; ONO, Kohei2 ; MIWA, Kazuhiro3 ; SAMUKAWA, Seiji1 4
[1] Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
[2] Mizuho Information and Research Institute, Inc., 2-3 Kanda-Nishikicho, Chiyoda-ku, Tokyo 101-8443, Japan
[3] Micro System Integration Center (μSIC), Tohoku University, 519-1176 Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan
[4] WPI-AIMR, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan - Source
Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 41 ; 415203.1-415203.7 ; ref : 19 ref
- CODEN
- JPAPBE
- ISSN
- 0022-3727
- Scientific domain
- Condensed state physics; Physics; Plasma physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Courant ionique Densité courant Densité ion Densité électron Distribution densité Etude expérimentale Etude théorique Gaine plasma Gravure plasma Pastille électronique Plasma couplé inductivement Silicium Simulation ordinateur Traitement par plasma 5240K 5277 5277B 5280Y Paramètre plasma
- Keyword (en)
- Ionic current Current density Ion density Electron density Density distribution Experimental study Theoretical study Plasma sheaths Plasma etching Wafers Inductively coupled plasma Silicon Computerized simulation Plasma assisted processing Plasma parameter
- Keyword (es)
- Corriente iónica Distribución densidad Grabado plasma
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B40 Plasma interactions (nonlaser) / 001B50B40K Plasma sheaths
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B77 Plasma applications / 001B50B77B Etching and cleaning
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B80 Electric discharges / 001B50B80Y Discharges for spectral sources (including inductively coupled plasmas)
- Discipline
- Physics of gases, plasmas and electric discharges
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27817347
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0022-3727/46/41/415203 
https://dx.doi.org/10.1088/0022-3727/46/41/415203
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1088\/0022-3727\/46\/41\/415203\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:182:\"Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"46\";s:8:\"\u0000*\u0000issue\";s:2:\"41\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"415203.1-415203.7\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KUBOTA\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Tomohiro\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:14:\"OHTAKE, Hiroto\";i:1;s:14:\"ARAKI, Ryosuke\";i:2;s:17:\"YANAGISAWA, Yuuki\";i:3;s:15:\"IWASAKI, Takuya\";i:4;s:10:\"ONO, Kohei\";i:5;s:14:\"MIWA, Kazuhiro\";i:6;s:15:\"SAMUKAWA, Seiji\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:182:\"Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1088\/0022-3727\/46\/41\/415203\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:182:\"Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"46\";s:8:\"\u0000*\u0000issue\";s:2:\"41\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"415203.1-415203.7\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KUBOTA\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Tomohiro\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:14:\"OHTAKE, Hiroto\";i:1;s:14:\"ARAKI, Ryosuke\";i:2;s:17:\"YANAGISAWA, Yuuki\";i:3;s:15:\"IWASAKI, Takuya\";i:4;s:10:\"ONO, Kohei\";i:5;s:14:\"MIWA, Kazuhiro\";i:6;s:15:\"SAMUKAWA, Seiji\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:182:\"Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:30:\"10.1088\/0022-3727\/46\/41\/415203\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1088\/0022-3727\/46\/41\/415203\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:182:\"Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"46\";s:8:\"\u0000*\u0000issue\";s:2:\"41\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"415203.1-415203.7\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KUBOTA\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Tomohiro\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:14:\"OHTAKE, Hiroto\";i:1;s:14:\"ARAKI, Ryosuke\";i:2;s:17:\"YANAGISAWA, Yuuki\";i:3;s:15:\"IWASAKI, Takuya\";i:4;s:10:\"ONO, Kohei\";i:5;s:14:\"MIWA, Kazuhiro\";i:6;s:15:\"SAMUKAWA, Seiji\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:182:\"Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1088\/0022-3727\/46\/41\/415203\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:182:\"Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"46\";s:8:\"\u0000*\u0000issue\";s:2:\"41\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"415203.1-415203.7\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KUBOTA\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Tomohiro\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:14:\"OHTAKE, Hiroto\";i:1;s:14:\"ARAKI, Ryosuke\";i:2;s:17:\"YANAGISAWA, Yuuki\";i:3;s:15:\"IWASAKI, Takuya\";i:4;s:10:\"ONO, Kohei\";i:5;s:14:\"MIWA, Kazuhiro\";i:6;s:15:\"SAMUKAWA, Seiji\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:182:\"Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1088\/0022-3727\/46\/41\/415203\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:182:\"Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2013\";s:9:\"\u0000*\u0000volume\";s:2:\"46\";s:8:\"\u0000*\u0000issue\";s:2:\"41\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"415203.1-415203.7\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KUBOTA\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Tomohiro\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:14:\"OHTAKE, Hiroto\";i:1;s:14:\"ARAKI, Ryosuke\";i:2;s:17:\"YANAGISAWA, Yuuki\";i:3;s:15:\"IWASAKI, Takuya\";i:4;s:10:\"ONO, Kohei\";i:5;s:14:\"MIWA, Kazuhiro\";i:6;s:15:\"SAMUKAWA, Seiji\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:182:\"Prediction of etching-shape anomaly due to distortion of ion sheath around a large-scale three-dimensional structure by means of on-wafer monitoring technique and computer simulation\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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