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Interface structures and strain relaxation mechanisms of ferroelectric BaTiO3/SrTiO3 multilayers on (001) MgO substrates

Author
YING DING1 2 ; JIANGHUA CHEN1 2 ; JUNMING HE3 ; MING LIU4 ; CHUNRUI MA3 ; CHONGLIN CHEN4 5
[1] Centre for High Resolution Electron Microscopy, College of Material Science and Engineering, Hunan University, Changsha 410082, China
[2] Hunan Province Key Laboratory for Spray Deposition Technology and Application, Hunan University, Changsha 410082, China
[3] College of Chemistry and Biological Engineering, Changsha University of Science and Technology, Changsha 410076, China
[4] Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX 78249, United States
[5] The Texas Center for Superconductivity, University of Houston, Houston, TX 77204, United States
Source

Journal of crystal growth. 2013, Vol 383, pp 19-24, 6 p ; ref : 32 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
A1. Characterization A1. Defects A1. Growth models A3. Pulsed laser deposition B1. Perovskites B2. Ferroelectric materials
Keyword (fr)
Bicouche Couche multimoléculaire Couche épitaxique Cristallinité Dislocation interfaciale Défaut empilement Dépôt laser pulsé Epitaxie Etude théorique Ferroélectrique Matériau ferroélectrique Microscopie électronique Microstructure Morphologie Multicouche Mécanisme croissance Méthode ablation laser Propriété mécanique Relaxation contrainte Relaxation structurale Structure basaltique Structure interface 6172L 6172N 7784 8110A BaTiO3 Substrat MgO Substrat SrTiO3
Keyword (en)
Bilayers Multilayer Epitaxial layers Crystallinity Misfit dislocations Stacking faults Pulsed laser deposition Epitaxy Theoretical study Ferroelectric materials Ferroelectric materials Electron microscopy Microstructure Morphology Multilayers Growth mechanism Laser ablation technique Mechanical properties Stress relaxation Structure relaxation Columnar structure Interface structure
Keyword (es)
Capa multimolecular Cristalinidad Material ferroeléctrico Mecanismo crecimiento Relajación estructural Estructura columnar
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72L Linear defects: dislocations, disclinations

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72N Stacking faults and other planar or extended defects

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70G Dielectrics, piezoelectrics, and ferroelectrics and their properties / 001B70G84 Dielectric, piezoelectric, ferroelectric and antiferroelectric materials

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
27880283

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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