Characterization of High-k Gate Dielectric with Amorphous Nanostructure
- Author
- BAHARI, Ali1 ; GHOLIPUR, Reza1
[1] Department of Physics, University of Mazandaran, 4741695447 Babolsar, Iran, Islamic Republic of - Source
Journal of electronic materials. 2013, Vol 42, Num 12, pp 3529-3540, 12 p ; ref : 32 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Author keyword
- CMOS high-k dielectric nanostructures sol―gel method
- Keyword (fr)
- Caractéristique capacité tension Caractéristique courant tension Constante diélectrique Couche mince Diffraction RX Dispositif semiconducteur Diélectrique permittivité élevée Electrode commande Microscopie force atomique Microscopie électronique balayage Microscopie électronique transmission Microstructure Morphologie Méthode analytique Nanostructure Procédé sol gel Propriété électrique Propriété électronique Recuit thermique Semiconducteur Spectrométrie dispersive Structure MOS Synthèse nanomatériau Technologie MOS complémentaire 8116
- Keyword (en)
- CV characteristic IV characteristic Permittivity Thin films XRD Semiconductor devices High k dielectric Gates Atomic force microscopy Scanning electron microscopy Transmission electron microscopy Microstructure Morphology Analytical method Nanostructures Sol-gel process Electrical properties Electronic properties Thermal annealing Semiconductor materials Dispersive spectrometry MOS structure Nanomaterial synthesis Complementary MOS technology
- Keyword (es)
- Dieléctrico alta constante dieléctrica Método analítico Propiedad electrónica Recocido térmico Espectrometría dispersiva Estructura MOS Síntesis nanomaterial Tecnología MOS complementario
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 27976830
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-013-2772-z 
https://dx.doi.org/10.1007/s11664-013-2772-z
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