Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1_xBix/GaAs heterostructures
- Author
- MAZUR, Yu I1 ; DOROGAN, V. G1 ; SALAMO, G. J1 ; DE SOUZA, L. D1 2 ; FAN, D3 ; BENAMARA, M1 ; SCHMIDBAUER, M4 ; WARE, M. E1 ; TARASOV, G. G5 ; YU, S.-Q3 ; MARQUES, G. E2
[1] Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, AR 72701, United States
[2] Departamento de Física, Universidade Federal de São Carlos, 13.565-905, São Carlos, São Paulo, Brazil
[3] Department of Electrical Engineering, University of Arkansas, 3217 Bell Engineering, Fayetteville, AR 72701, United States
[4] Leibniz-Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany
[5] Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, Kyiv 03028, Ukraine - Source
Nanotechnology (Bristol. Print). 2014, Vol 25, Num 3 ; 035702.1-035702.9 ; ref : 31 ref
- ISSN
- 0957-4484
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Arséniure de gallium Composé III-V Confinement Courant seuil Diffusion thermique Epitaxie jet moléculaire Exciton Hétérostructure Intensité excitation Luminescence Nanomatériau Photoluminescence Propriété optique Puits quantique Semiconducteur III-V 7135 7867 8107B 8107S AlGaAs GaAs1-xBix
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Gallium arsenides III-V compound Confinement Threshold current Thermal diffusion Molecular beam epitaxy Excitons Heterostructures Excitation intensity Luminescence Nanostructured materials Photoluminescence Optical properties Quantum wells III-V semiconductors
- Keyword (es)
- Mixto Compuesto III-V Intensidad excitación
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A35 Excitons and related phenomena
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H67 Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07S Quantum wells
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28110769
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0957-4484/25/3/035702 
https://dx.doi.org/10.1088/0957-4484/25/3/035702
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