Ionized vapor deposition of antimicrobial Ti-Cu films with controlled copper release
- Author
- STRANAK, Vitezslav1 2 ; WULFF, Harm1 ; HIPPLER, Rainer1 ; KSIROVA, Petra3 ; ZIETZ, Carmen4 ; DRACHE, Steffen1 ; CADA, Martin3 ; HUBICKA, Zdenek3 ; BADER, Rainer4 ; TICHY, Milan5 ; HELM, Christiane A1
[1] University of Greifswald, Institute of Physics, Felix-Hausdorff-Str. 6, 17489 Greifswald, Germany
[2] University of South Bohemia, Faculty of Science, Branisovska 35, 37005 Ceske Budejovice, Czech Republic
[3] Institute of Physics v. v. i., Academy of Science of the Czech Republic, Na Slovance 2, 18221 Prague, Czech Republic
[4] University Medicine Rostock Department of Orthopaedics, Doberaner Str. 142, 18057 Rostock, Germany
[5] Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, 18000 Prague, Czech Republic - Source
Thin solid films. 2014, Vol 550, pp 389-394, 6 p ; ref : 48 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Copper release Copper High power impulse magnetron sputtering Thin films Ti-Cu films Titanium X-ray Photoelectron Spectroscopy X-ray diffraction
- Keyword (fr)
- Bactérie Couche mince Cuivre Diffraction RX Distribution ion Dépôt phase vapeur Dépôt physique phase vapeur Dépôt pulvérisation Effet pression Fonction distribution Fonction répartition Forme cristalline Microstructure Mécanisme croissance Ostéoblaste Procédé dépôt Pulvérisation cathodique Résolution temporelle Spectre photoélectron RX Spectre résolution temporelle Titane Traitement surface Transformation phase cristalline Transformation phase 6855A 6855N 8115C 8115K
- Keyword (en)
- Bacteria Thin films Copper XRD Ion distribution Vapor deposition Physical vapor deposition Sputter deposition Pressure effects Distribution functions Distribution function Crystal form Microstructure Growth mechanism Osteoblast Deposition process Cathode sputtering Time resolution X-ray photoelectron spectra Time resolved spectra Titanium Surface treatments Crystal-phase transformations Phase transformations
- Keyword (es)
- Distribución ión Función distribución Forma cristalina Mecanismo crecimiento Osteoblasto Procedimiento revestimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55N Composition and phase identification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28251238
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2013.11.001 
https://dx.doi.org/10.1016/j.tsf.2013.11.001
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