High red emission intensity of Eu:Y2O3 films grown on Si(100)/Si (111) by electron beam evaporation
- Author
- RIVERA, V. A. G1 ; FERRI, F. A1 ; CLABEL H., J. L2 ; PEREIRA-DA-SILVA, M. A1 3 ; NUNES, L. A. O1 ; SIU LI, M1 ; MAREGA, E1
[1] Instituto de Física de São Carlos-USP, Caixa Postal 369, São Carlos 13560-970, SP, Brazil
[2] Grupo de Materiais e Dispositivos, Departamento de Física, UFSCar, Caixa Postal 676, 13565-905 São Carlos, SP, Brazil
[3] Centro Universitário Central Paulista, UNICEP, São Carlos 13563-470, SP, Brazil - Source
Journal of luminescence. 2014, Vol 148, pp 186-191, 6 p ; ref : 35 ref
- CODEN
- JLUMA8
- ISSN
- 0022-2313
- Scientific domain
- Atomic molecular physics; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Materials Rare-earths Spectroscopy Thin films
- Keyword (fr)
- Atmosphère contrôlée Couche mince Dopage Durée vie Epaisseur Europium Evaporation faisceau électronique Oxyde d'yttrium Photoluminescence Propriété optique Recuit Silicium Traitement thermique Transition dipolaire magnétique Si Substrat silicium Y2O3
- Keyword (en)
- Controlled atmospheres Thin films Doping Lifetime Thickness Europium Electron beam evaporation Yttrium oxide Photoluminescence Optical properties Annealing Silicon Heat treatments Magnetic dipole transition
- Keyword (es)
- Doping Ytrio óxido Transición dipolar magnética
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A40 Treatment of materials and its effects on microstructure and properties / 001B80A40E Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28312375
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jlumin.2013.12.022 
https://dx.doi.org/10.1016/j.jlumin.2013.12.022
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