Annealing effects on zinc oxide-silica films prepared by sol-gel technique for chemical sensing applications

Author

ATIF MOSSAD ALI^{1 2} ; ISMAIL, Adel A^{3 4} ; NAJMY, Rasha⁵ ; AL-HAJRY, Ali^{3 6}
[1] Department of Physics, Faculty of Science, King Khalid University, Abha, Saudi Arabia
[2] Department of Physics, Faculty of Science, Assiut University, Assiut 71516, Egypt
[3] Promising Centre for Sensors and Electronic Devices (PCSED), Najran University, PO Box 1988, Najran 11001, Saudi Arabia
[4] Central Metallurgical R&D Institute, CMRDI, Helwan, Cairo 11421, Egypt
[5] Science Department, Girls' College of Education, King Khalid University, Saudi Arabia
[6] Department of Physics, College of Science and Arts, Najran University, Saudi Arabia

Source

Thin solid films. 2014, Vol 558, pp 378-384, 7 p ; ref : 38 ref

CODEN

THSFAP

ISSN

0040-6090

Scientific domain

Crystallography; Metallurgy, welding; Condensed state physics

Publisher

Elsevier, Amsterdam

Publication country

Netherlands

Document type

Article

Language

English

Author keyword

Chemical sensors Composite Optical band gap Photoluminescence Silicon dioxide Sol-gel deposition Structural properties Zinc oxide

Keyword (fr)

Analyse diffraction RX Analyse quantitative Bande interdite photonique Capteur chimique Cinétique réaction Couche mince Dépendance température Déplacement raie Déplacement vers le bleu Déplacement vers le rouge Forme sphérique Grosseur grain Hydrazine Matériau composite Microscopie électronique transmission Morphologie surface Nanomatériau Nanoparticule Ordre 2 Oxyde de zinc Photoluminescence Procédé sol gel Propriété optique Recuit thermique Silice Silicium Structure surface Température recuit 6855J 7855 8107 8115L Substrat silicium ZnO

Keyword (en)

X-ray diffraction analysis Quantitative chemical analysis Photonic band gap Chemical sensors Reaction kinetics Thin films Temperature dependence Spectral line shift Blue shift Red shift Spherical shape Grain size Hydrazine Composite materials Transmission electron microscopy Surface morphology Nanostructured materials Nanoparticles Second order Zinc oxide Photoluminescence Sol-gel process Optical properties Thermal annealing Silica Silicon Surface structure Annealing temperature

Keyword (es)

Forma esférica Orden 2 Zinc óxido Recocido térmico Temperatura recocido

Classification

Pascal

001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A16 Electron, ion, and scanning probe microscopy

Pascal

001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal

001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Discipline

Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties

Origin

Inist-CNRS

Database

PASCAL

INIST identifier

28423013

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS